SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Organization Name

Inventor(s)

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240162352 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Simplified Explanation

The semiconductor device described in the abstract consists of a first electrode with carbon, an anti-oxidation layer on the first electrode, a barrier layer with oxide, a variable resistance layer, and a second electrode on the variable resistance layer. The anti-oxidation layer and the barrier layer may have a thickness of 0.1 nm to 2 nm.

First electrode with carbon
Anti-oxidation layer on the first electrode
Barrier layer with oxide
Variable resistance layer
Second electrode on the variable resistance layer

Potential Applications

The technology described in the patent application could potentially be used in:

Memory devices
Resistive random-access memory (RRAM)
Neuromorphic computing

Problems Solved

The technology addresses the following issues:

Oxidation of the first electrode
Ensuring stable resistance levels
Enhancing device performance and longevity

Benefits

The benefits of this technology include:

Improved device reliability
Enhanced resistance switching characteristics
Increased device lifespan

Potential Commercial Applications

The semiconductor device could find applications in:

Consumer electronics
Data storage devices
Medical devices

Possible Prior Art

One possible prior art for this technology could be the use of anti-oxidation layers in semiconductor devices to prevent oxidation of electrodes and improve device performance.

Unanswered Questions

How does the thickness of the anti-oxidation and barrier layers impact device performance?

The abstract mentions a specific thickness range for these layers, but it does not elaborate on how variations within this range could affect the device's functionality and reliability.

Are there any specific manufacturing processes required for integrating these layers into the semiconductor device?

While the abstract provides an overview of the layers involved, it does not delve into the specific techniques or methods needed to incorporate them into the device during the manufacturing process.

Original Abstract Submitted

a semiconductor device may include a first electrode including carbon, an anti-oxidation layer located on the first electrode, a barrier layer located on the anti-oxidation layer and including oxide, a variable resistance layer located on the barrier layer, and a second electrode located on the variable resistance layer. one or both of the anti-oxidation layer and the barrier layer may each have a thickness of 0.1 nm to 2 nm.