18302692. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SK hynix Inc.)
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18302692 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes a first electrode with carbon, an anti-oxidation layer, a barrier layer with oxide, a variable resistance layer, and a second electrode. The anti-oxidation layer and the barrier layer may have a thickness of 0.1 nm to 2 nm.
- First electrode with carbon
- Anti-oxidation layer to prevent oxidation
- Barrier layer with oxide
- Variable resistance layer
- Second electrode
- Anti-oxidation layer and barrier layer thickness of 0.1 nm to 2 nm
Potential Applications
The technology could be applied in:
- Memory devices
- Resistive random-access memory (RRAM)
- Neuromorphic computing
Problems Solved
The technology helps in:
- Preventing oxidation of the first electrode
- Enhancing the performance and reliability of the semiconductor device
Benefits
The benefits of this technology include:
- Improved device performance
- Increased device reliability
- Enhanced durability
Potential Commercial Applications
The technology could be used in:
- Electronics industry
- Semiconductor manufacturing
- Memory storage devices
Possible Prior Art
One possible prior art could be the use of anti-oxidation layers in semiconductor devices to prevent oxidation and improve device performance.
Unanswered Questions
How does the thickness of the anti-oxidation layer and barrier layer impact the overall performance of the semiconductor device?
The thickness of these layers could affect the device's resistance, durability, and reliability.
What are the specific materials used in the anti-oxidation layer and barrier layer, and how do they contribute to the functionality of the device?
The materials used in these layers play a crucial role in preventing oxidation and enhancing the device's performance.
Original Abstract Submitted
A semiconductor device may include a first electrode including carbon, an anti-oxidation layer located on the first electrode, a barrier layer located on the anti-oxidation layer and including oxide, a variable resistance layer located on the barrier layer, and a second electrode located on the variable resistance layer. One or both of the anti-oxidation layer and the barrier layer may each have a thickness of 0.1 nm to 2 nm.
