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Category:H01L21/285
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Pages in category "H01L21/285"
The following 200 pages are in this category, out of 320 total.
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- 17548997. FILM DEPOSITION METHOD AND ELEMENT INCLUDING FILM DEPOSITED BY THE FILM DEPOSITION METHOD simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17657822. Adjusting the Profile of Source/Drain Regions to Reduce Leakage simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17809030. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17815854. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17876389. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17877970. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17886797. SEMICONDUCTOR DEVICE AND METHODS OF FABRICATION THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17887487. SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17957599. VTFETS WITH WRAP-AROUND BACKSIDE CONTACTS simplified abstract (International Business Machines Corporation)
- 17963591. SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18021813. Substrate and Preparation Method thereof, Integrated Passive Device, and Electronic Apparatus simplified abstract (BOE Technology Group Co., Ltd.)
- 18062502. METHOD OF FORMING LOW-RESISTIVITY RU ALD THROUGH A BI-LAYER PROCESS AND RELATED STRUCTURES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18071168. VERTICAL FIELD EFFECT TRANSISTOR (VFET) STRUCTURE WITH DIELECTRIC PROTECTION LAYER AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18083075. Method for Gapfill simplified abstract (Applied Materials, Inc.)
- 18085871. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18093139. Method and Apparatus for Substrate Temperature Control simplified abstract (Applied Materials, Inc.)
- 18097323. CONTACT STRUCTURES WITH DEPOSITED SILICIDE LAYERS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18099459. ATOMIC LAYER DEPOSITION OF RUTHENIUM OXIDE COATINGS simplified abstract (Applied Materials, Inc.)
- 18118736. ELECTRONIC PACKAGE STRUCTURE simplified abstract (Advanced Semiconductor Engineering, Inc.)
- 18119953. SEMICONDUCTOR DEVICE WITH CAPPING LAYER simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18136070. EDGE RING, SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME, AND SUBSTRATE PROCESSING METHOD USING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18152938. SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18153571. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18154275. SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18155296. SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18157607. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18176692. METHOD OF DEPOSITING ATOMIC LAYER AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18181042. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18185242. SEMICONDUCTOR DEVICES CONTAINING BI-METALLIC SILICIDE WITH REDUCED CONTACT RESISTIVITY simplified abstract (Applied Materials, Inc.)
- 18234596. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18234596. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18236925. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18237420. SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF (United Microelectronics Corp.)
- 18240008. SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18295433. METHOD OF FABRICATING A SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18359241. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18367292. GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18371328. Semiconductor Devices Including Resistor Structures simplified abstract (Samsung Electronics Co., Ltd.)
- 18380930. SEMICONDUCTOR DEVICE WITH CAPPING LAYER AND METHOD FOR FABRICATING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18396174. INTEGRATED CIRCUIT CONTACT STRUCTURES simplified abstract (Intel Corporation)
- 18402018. FIN FIELD-EFFECT TRANSISTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18408932. SEMICONDUCTOR DEVICE AND METHOD (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18416304. Fluorinated Aluminum Coated Component for a Substrate Processing Apparatus and Method of Producing simplified abstract (Applied Materials, Inc.)
- 18416508. TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18416737. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18419526. INTEGRATION SOLUTION FOR NAND DEEP CONTACT GAP FILL simplified abstract (Applied Materials, Inc.)
- 18428198. ETCHING PLATINUM-CONTAINING THIN FILM USING PROTECTIVE CAP LAYER simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
- 18433899. SYSTEM AND METHOD FOR DIAGNOSING PLASMA CHAMBER simplified abstract (ASM IP Holding B.V.)
- 18434077. VIA STRUCTURE HAVING LOW INTERFACE RESISTANCE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18435140. Transistor Gate Structure and Method of Forming simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18435609. DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18446827. VERTICAL SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE VERTICAL SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
- 18451824. Display Apparatus simplified abstract (LG Display Co., Ltd.)
- 18457313. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18464539. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18465439. METHOD OF MANUFACTURING METAL NITRIDE FILM AND ELECTRONIC DEVICE INCLUDING METAL NITRIDE FILM simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18467859. MITIGATING PROXIMITY EFFECTS OF DEEP TRENCH VIAS (Intel Corporation)
- 18502183. Sacrificial Layer for Semiconductor Process simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18508788. MELT ANNEAL SOURCE AND DRAIN REGIONS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18513297. SEMICONDUCTOR DEVICE INCLUDING EPITAXIAL REGION simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18515536. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18515842. Semiconductor Device, Method and Machine of Manufacture simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18517565. A SEMICONDUCTOR DEVICE FOR RECESSED FIN STRUCTURE HAVING ROUNDED CORNERS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18518081. Metal Contact Structure and Method of Forming the Same in a Semiconductor Device simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18518413. GATE STRUCTURE, FIN FIELD-EFFECT TRANSISTOR, AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18521701. SEMICONDUCTOR DEVICE HAVING CONTACT FEATURE AND METHOD OF FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18521931. METAL SOURCE/DRAIN FEATURES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18522265. METHOD OF MANUFACTURING GATE STRUCTURE AND METHOD OF MANUFACTURING FIN-FIELD EFFECT TRANSISTOR simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18524533. METAL-INSULATOR-METAL (MIM) CAPACITORS WITH IMPROVED RELIABILITY (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18541091. METHOD OF SELECTIVELY FORMING LAYER USING ATOMIC LAYER DEPOSITION AND METHOD OF FORMING INTERCONNECT OF SEMICONDUCTOR DEVICE USING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18547481. NON-METAL INCORPORATION IN MOLYBDENUM ON DIELECTRIC SURFACES simplified abstract (Lam Research Corporation)
- 18557675. PROCESSING SYSTEM AND METHODS FOR FORMING VOID-FREE AND SEAM-FREE TUNGSTEN FEATURES simplified abstract (Applied Materials, Inc.)
- 18558388. METHODS TO IMPROVE PRODUCTIVITY OF ADVANCED CVD W GAPFILL PROCESS simplified abstract (Applied Materials, Inc.)
- 18583194. METAL ADHESION LAYER TO PROMOTE METAL PLUG ADHESION simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18597415. SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM simplified abstract (Kokusai Electric Corporation)
- 18597952. METHODS OF FORMING FINFET DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18608005. SELECTIVE COBALT DEPOSITION ON COPPER SURFACES simplified abstract (Applied Materials, Inc.)
- 18613296. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18616741. VOID FREE LOW STRESS FILL simplified abstract (Lam Research Corporation)
- 18618815. SELF-ALIGNED BARRIER FOR METAL VIAS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18619633. Selective Formation Of Titanium Silicide And Titanium Nitride By Hydrogen Gas Control simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18621413. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME (Samsung Electronics Co., Ltd.)
- 18633188. DISPLAY DEVICE, METHOD OF MANUFACTURING DISPLAY DEVICE, AND ELECTRONIC APPARATUS (Sony Group Corporation)
- 18635641. ASYMMETRIC EPITAXY REGIONS FOR LANDING CONTACT PLUG simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18650166. MIDDLE-OF-LINE INTERCONNECT STRUCTURE AND MANUFACTURING METHOD simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18658521. AIR SPACERS AROUND CONTACT PLUGS AND METHOD FORMING SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18660318. Adjusting Work Function Through Adjusting Deposition Temperature simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18666322. SELECTIVE DUAL SILICIDE FORMATION simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18671164. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18671732. Contact Structures With Deposited Silicide Layers simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18673596. FET SILICIDE AND FABRICATION METHODS THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.)
- 18731181. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18731593. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18741987. Semiconductor Devices Including Backside Vias and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18749503. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18749899. SEMICONDUCTOR STRUCTURE WITH AIR GAP IN PATTERN-DENSE REGION AND METHOD OF MANUFACTURING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18753130. Metal Gates and Methods of Forming Thereby simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18757013. CONTACT RESISTANCE REDUCTION IN TRANSISTOR DEVICES WITH METALLIZATION ON BOTH SIDES simplified abstract (Intel Corporation)
- 18890180. Substrate Processing Apparatus, Substrate Processing Method, Method of Manufacturing Semiconductor Device and Non-transitory Computer-readable Recording Medium (Kokusai Electric Corporation)
- 18890816. NITRIDE SEMICONDUCTOR DEVICE (ROHM CO., LTD.)
- 18895226. SELECTIVE PROCESSING WITH ETCH RESIDUE-BASED INHIBITORS (Lam Research Corporation)
- 18940382. HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION (Intel Corporation)
- 18944930. METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND A SEMICONDUCTOR DEVICE (Taiwan Semiconductor Manufacturing Company, LTD.)
- 18945264. SEMICONDUCTOR DEVICE ISOLATION OF CONTACT AND SOURCE/DRAIN STRUCTURES (Taiwan Semiconductor Manufacturing Company, LTD.)
- 18946839. COMPOUND SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF (UNITED MICROELECTRONICS CORP.)
- 18955171. BOTTOM LATERAL EXPANSION OF CONTACT PLUGS THROUGH IMPLANTATION (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18956509. CONTACT RESISTANCE REDUCTION FOR TRANSISTORS (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18962406. PVD TARGET DESIGN AND SEMICONDUCTOR DEVICES FORMED USING THE SAME (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18962850. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE (FUJI ELECTRIC CO., LTD.)
- 18968357. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18970265. PLUGS FOR INTERCONNECT LINES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION (Intel Corporation)
A
- Applied materials, inc. (20240247370). ATOMIC LAYER DEPOSITION OF RUTHENIUM OXIDE COATINGS simplified abstract
- Applied materials, inc. (20240247376). Fluorinated Aluminum Coated Component for a Substrate Processing Apparatus and Method of Producing simplified abstract
- Applied materials, inc. (20240258109). METHOD OF DEPOSITING A TUNGSTEN CONTAINING LAYER simplified abstract
- Applied materials, inc. (20240282631). INTEGRATION SOLUTION FOR NAND DEEP CONTACT GAP FILL simplified abstract
- Applied Materials, Inc. patent applications on August 1st, 2024
- Applied Materials, Inc. patent applications on August 22nd, 2024
- Applied Materials, Inc. patent applications on February 13th, 2025
- Applied Materials, Inc. patent applications on January 30th, 2025
- Applied Materials, Inc. patent applications on July 25th, 2024
B
H
- Huahong ZealCore Electronics Technology Co.,Ltd (20250072095). TERMINAL STRUCTURE WITH OPTIMIZED RELIABILITY FOR POWER DEVICE, PREPARATION METHOD THEREFOR AND APPLICATION THEREOF, POWER DEVICE AND PREPARATION METHOD THEREFOR
- Huawei technologies co., ltd. (20240274688). SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR, POWER AMPLIFICATION CIRCUIT, AND ELECTRONIC DEVICE simplified abstract
- Huawei Technologies Co., Ltd. patent applications on August 15th, 2024
I
- Intel corporation (20240105520). TRENCH PLUG HARDMASK FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240128340). INTEGRATED CIRCUIT CONTACT STRUCTURES simplified abstract
- Intel corporation (20240162332). TRENCH CONTACT STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240178071). DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240186127). SPUTTER TARGETS FOR SELF-DOPED SOURCE AND DRAIN CONTACTS simplified abstract
- Intel corporation (20240186403). DUAL METAL GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240204091). LOW ALUMINUM CONCENTRATION ALUMINUM GALLIUM NITRIDE INTERLAYER FOR GROUP III-NITRIDE (III-N) DEVICES simplified abstract
- Intel corporation (20240332392). INTEGRATED CIRCUIT STRUCTURES INCLUDING A TITANIUM SILICIDE MATERIAL simplified abstract
- Intel corporation (20240332399). GATE CUT AND FIN TRIM ISOLATION FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240347610). CONTACT RESISTANCE REDUCTION IN TRANSISTOR DEVICES WITH METALLIZATION ON BOTH SIDES simplified abstract
- Intel corporation (20250022939). CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
- Intel corporation (20250072078). HETEROGENEOUS METAL LINE COMPOSITIONS FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
- Intel corporation (20250098249). MITIGATING PROXIMITY EFFECTS OF DEEP TRENCH VIAS
- Intel corporation (20250098258). PLUGS FOR INTERCONNECT LINES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
- Intel Corporation patent applications on April 18th, 2024
- Intel Corporation patent applications on February 27th, 2025
- INTEL CORPORATION patent applications on February 8th, 2024
- Intel Corporation patent applications on January 16th, 2025
- Intel Corporation patent applications on January 25th, 2024
- Intel Corporation patent applications on June 20th, 2024
- INTEL CORPORATION patent applications on June 20th, 2024
- Intel Corporation patent applications on June 6th, 2024
- Intel Corporation patent applications on March 20th, 2025
- Intel Corporation patent applications on March 28th, 2024
- Intel Corporation patent applications on May 16th, 2024
- Intel Corporation patent applications on May 30th, 2024
- Intel Corporation patent applications on October 17th, 2024
- Intel Corporation patent applications on October 3rd, 2024
- International business machines corporation (20240113178). VTFETS WITH WRAP-AROUND BACKSIDE CONTACTS simplified abstract
- International business machines corporation (20240186325). STACKED TRANSISTORS HAVING BOTTOM CONTACT WITH LARGER SILICIDE simplified abstract
- International Business Machines Corporation patent applications on April 4th, 2024
- International Business Machines Corporation patent applications on June 6th, 2024
K
- Kabushiki kaisha toshiba (20240097000). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE simplified abstract
- Kabushiki kaisha toshiba (20240297220). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING simplified abstract
- KABUSHIKI KAISHA TOSHIBA patent applications on March 21st, 2024
- KABUSHIKI KAISHA TOSHIBA patent applications on September 5th, 2024
L
Q
R
S
- Samsung electronics co., ltd. (20240093368). EDGE RING, SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME, AND SUBSTRATE PROCESSING METHOD USING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240120213). SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240136416). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240203788). METHOD OF SELECTIVELY FORMING LAYER USING ATOMIC LAYER DEPOSITION AND METHOD OF FORMING INTERCONNECT OF SEMICONDUCTOR DEVICE USING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240222374). SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240234525). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240282708). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240355499). SPIRAL GRAPHENE NANOCRYSTAL, GRAPHENE FILM, INTERCONNECTSTRUCTURE, ELECTRONIC DEVICE INCLUDING SAME, AND METHOD OF FABRICATING INTERCONNECT STRUCTURE simplified abstract
- Samsung electronics co., ltd. (20240405090). SEMICONDUCTOR DEVICE
- Samsung electronics co., ltd. (20240429039). METHOD OF DEPOSITING FILM
- Samsung electronics co., ltd. (20250063763). SEMICONDUCTOR DEVICE
- Samsung electronics co., ltd. (20250089297). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Samsung electronics co., ltd. (20250107150). SEMICONDUCTOR DEVICES
- SAMSUNG ELECTRONICS CO., LTD. patent applications on April 11th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on April 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on April 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on August 22nd, 2024
- Samsung Electronics Co., Ltd. patent applications on December 26th, 2024
- Samsung Electronics Co., Ltd. patent applications on December 5th, 2024
- Samsung Electronics Co., Ltd. patent applications on February 13th, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 1st, 2024
- Samsung Electronics Co., Ltd. patent applications on February 20th, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 20th, 2025
- Samsung Electronics Co., Ltd. patent applications on July 11th, 2024
- Samsung Electronics Co., Ltd. patent applications on July 4th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on July 4th, 2024
- Samsung Electronics Co., Ltd. patent applications on June 20th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on June 20th, 2024
- Samsung Electronics Co., Ltd. patent applications on March 13th, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 14th, 2024
- Samsung Electronics Co., Ltd. patent applications on March 21st, 2024
- Samsung Electronics Co., Ltd. patent applications on March 27th, 2025