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Category:H01L21/22
Subcategories
This category has the following 7 subcategories, out of 7 total.
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Pages in category "H01L21/22"
The following 24 pages are in this category, out of 24 total.
1
- 18117498. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (KABUSHIKI KAISHA TOSHIBA)
- 18199504. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18315232. N-DIPOLE MATERIAL FOR STACKED TRANSISTORS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18402474. N-TYPE OF TRANSITION METAL DICHALCOGENIDE CHANNELS VIA SURFACE CHARGE TRANSFER FROM A DOPANT LAYER (SAMSUNG ELECTRONICS CO., LTD.)
- 18510231. SEMICONDUCTOR DEVICE simplified abstract (Kabushiki Kaisha Toshiba)
- 18510231. SEMICONDUCTOR DEVICE simplified abstract (Toshiba Electronic Devices & Storage Corporation)
- 18513624. SEMICONDUCTOR DEVICE AND FABRICATION METHOD simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18665569. SEMICONDUCTOR DEVICE INCLUDING AN IGBT WITH REDUCED VARIATION IN THRESHOLD VOLTAGE simplified abstract (FUJI ELECTRIC CO., LTD.)
- 18961193. FIELD EFFECT TRANSISTOR WITH DISABLED CHANNELS AND METHOD (Taiwan Semiconductor Manufacturing Co., Ltd.)
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- Samsung electronics co., ltd. (20250140559). N-TYPE OF TRANSITION METAL DICHALCOGENIDE CHANNELS VIA SURFACE CHARGE TRANSFER FROM A DOPANT LAYER
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 8th, 2024
- Samsung Electronics Co., Ltd. patent applications on May 1st, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on May 1st, 2025
T
- Taiwan semiconductor manufacturing co., ltd. (20240249943). N-DIPOLE MATERIAL FOR STACKED TRANSISTORS simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20250098222). FIELD EFFECT TRANSISTOR WITH DISABLED CHANNELS AND METHOD
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on July 25th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 20th, 2025