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Category:Alexander Reznicek of Troy NY (US)
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Pages in category "Alexander Reznicek of Troy NY (US)"
The following 82 pages are in this category, out of 82 total.
1
- 17453874. SELF ALIGNED TOP CONTACT FOR VERTICAL TRANSISTOR simplified abstract (International Business Machines Corporation)
- 17453882. GATE-ALL-AROUND NANOSHEET-FET WITH VARIABLE CHANNEL GEOMETRIES FOR PERFORMANCE OPTIMIZATION simplified abstract (International Business Machines Corporation)
- 17455935. PARASITIC CAPACITANCE REDUCTION FOR TALL NANOSHEET DEVICES simplified abstract (International Business Machines Corporation)
- 17455941. STACKED NANOSHEET DEVICES WITH MATCHED THRESHOLD VOLTAGES FOR NFET/PFET simplified abstract (International Business Machines Corporation)
- 17457271. INTEGRATION OF HORIZONTAL NANOSHEET DEVICE AND VERTICAL NANO FINS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17457565. TOP ELECTRODE TO METAL LINE CONNECTION FOR MAGNETO-RESISTIVE RANDOM-ACCESS MEMORY STACK HEIGHT REDUCTION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17493813. ARTIFICIAL INTELLIGENCE (AI) DEVICES WITH IMPROVED THERMAL STABILITY AND SCALING BEHAVIOR simplified abstract (International Business Machines Corporation)
- 17494101. STACKED COMPLEMENTARY FIELD EFFECT TRANSISTORS simplified abstract (International Business Machines Corporation)
- 17524062. VERTICAL TRANSISTORS HAVING IMPROVED CONTROL OF PARASITIC CAPACITANCE AND GATE-TO-CONTACT SHORT CIRCUITS simplified abstract (International Business Machines Corporation)
- 17527355. MULTI-VT NANOSHEET DEVICES simplified abstract (International Business Machines Corporation)
- 17528197. PHASE CHANGE MEMORY GAPS simplified abstract (International Business Machines Corporation)
- 17528279. TUNNEL FIELD EFFECT TRANSISTOR DEVICES simplified abstract (International Business Machines Corporation)
- 17541529. Fork Sheet with Reduced Coupling Effect simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17542662. SELECTIVE DIPOLE LAYER MODULATION USING TWO-STEP INNER SPACER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17543957. PHASE CHANGE MEMORY PROGRAMMING CURRENT LEAKAGE REDUCTION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17545195. GLOBAL HEATER FOR PHASE CHANGE MEMORY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17548913. NANOSHEET DEVICE WITH VERTICAL BLOCKER FIN simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17550464. PARAMAGNETIC HEXAGONAL METAL PHASE COUPLING SPACER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17550724. SEMICONDUCTOR STRUCTURES WITH WRAP-AROUND CONTACT STRUCTURE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551439. Programming Current Control for Artificial Intelligence (AI) Devices simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17551463. NANOSHEET DEVICE WITH T-SHAPED DUAL INNER SPACER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17931664. MRAM WITH DOPED SILICON-GERMANIUM-TIN ALLOY ELECTRODES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17933378. OPTIMIZING COMPUTER-BASED GENERATION OF THREE-DIMENSIONAL VIRTUAL OBJECTS simplified abstract (International Business Machines Corporation)
- 17934026. CONTEXTUAL VIRTUAL REALITY RENDERING AND ADOPTING BIOMARKER ANALYSIS simplified abstract (International Business Machines Corporation)
- 17942822. Pillar Based Memory (MRAM) Embedded within the Buried Power Rail within a Backside Power Distribution Network simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17943564. Large Surface VBPR for Robust Alignment in Advanced Technology Nodes simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17955677. COMPOSITE CONTACT BETWEEN BACKSIDE POWER ELEMENT AND SOURCE/DRAIN REGION simplified abstract (International Business Machines Corporation)
- 17956309. EXTENDED EPITAXIAL GROWTH FOR IMPROVED CONTACT RESISTANCE simplified abstract (International Business Machines Corporation)
- 17962496. CoFeB Based Magnetic Tunnel Junction Device with Boron Encapsulation Layer simplified abstract (International Business Machines Corporation)
- 17985804. FAST SWITCHING MRAM HAVING AN ALUMINUM-MANGANESE-GERMANIUM FREE LAYER COMBINED WITH A CHROMIUM DIFFUSION BARRIER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18054349. BURIED POWER RAIL VIA WITH REDUCED ASPECT RATIO DISCREPANCY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18055911. VIRTUAL REALITY DESIGN NAVIGATION USING A TEMPORAL COLLABORATION DEPENDENCY MAP simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18064261. REACTIVE SERIAL RESISTANCE REDUCTION FOR MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICES simplified abstract (International Business Machines Corporation)
- 18066439. EMBEDDED SENSOR CHIPS IN 3D AND 4D PRINTED STRUCTURES THROUGH SELECTIVE FILAMENT INFUSION simplified abstract (International Business Machines Corporation)
- 18066445. STRUCTURAL MONITORING WITH EMBEDDED SENSORS IN 3D AND 4D PRINTED STRUCTURES simplified abstract (International Business Machines Corporation)
- 18071974. SEMICONDUCTOR TRANSISTOR STRUCTURE HAVING AN EPITAXIAL OXIDE SPACER LAYER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18080029. BACKSIDE POWER DISTRIBUTION NETWORK SUBSTRATE USING A LATTICE MATCHED ETCH STOP LAYER simplified abstract (International Business Machines Corporation)
- 18080721. MEMORY CELLS WITH DARLINGTON PAIR BIPOLAR JUNCTION TRANSISTOR SELECTOR DEVICES simplified abstract (International Business Machines Corporation)
- 18089634. HYBRID CMOS WITH FIN AND NANOSHEET ARCHITECTURES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18089670. FERROELECTRIC-RAM WITH INTEGRATED DOMAIN REVERSAL CATALYST simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18091968. BACKSIDE-CONNECTING VIA WITH NANOSHEET SPACERS FOR TRANSISTORS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18097194. ORDERED ALLOY MAGNETIC TUNNEL JUNCTION WITH SIMPLIFIED SEED STRUCTURE simplified abstract (International Business Machines Corporation)
- 18147525. NANOSHEET DEVICE WITH NITRIDE ISOLATION STRUCTURES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18178622. COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR-BASED NANOFILTERS FOR DIAGNOSTICS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18179511. STACKED UPPER TRANSISTOR AND LOWER TRANSISTOR simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18232640. MOON-SHAPED BOTTOM SPACER FOR VERTICAL TRANSPORT FIELD EFFECT TRANSISTOR (VTFET) DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18346125. EXTREMELY HIGH DENSITY SILICON CAPACITOR (International Business Machines Corporation)
- 18508367. GATE INDUCED DRAIN LEAKAGE REDUCTION IN FINFETS simplified abstract (International Business Machines Corporation)
I
- International business machines corporation (20240094801). CONTEXTUAL VIRTUAL REALITY RENDERING AND ADOPTING BIOMARKER ANALYSIS simplified abstract
- International business machines corporation (20240096012). OPTIMIZING COMPUTER-BASED GENERATION OF THREE-DIMENSIONAL VIRTUAL OBJECTS simplified abstract
- International business machines corporation (20240097006). GATE INDUCED DRAIN LEAKAGE REDUCTION IN FINFETS simplified abstract
- International business machines corporation (20240105768). EPI GROWTH UNIFORMITY WITH SOURCE/DRAIN PLACEHOLDER simplified abstract
- International business machines corporation (20240105788). LOCAL INTERCONNECT AT BACKSIDE TO ENABLE FLEXIBLE ROUTING ACROSS DIFFERENT CELL simplified abstract
- International business machines corporation (20240112986). COMPOSITE CONTACT BETWEEN BACKSIDE POWER ELEMENT AND SOURCE/DRAIN REGION simplified abstract
- International business machines corporation (20240113232). EXTENDED EPITAXIAL GROWTH FOR IMPROVED CONTACT RESISTANCE simplified abstract
- International business machines corporation (20240122076). CoFeB Based Magnetic Tunnel Junction Device with Boron Encapsulation Layer simplified abstract
- International business machines corporation (20240128191). POWER DISTRIBUTION NETWORK WITH BACKSIDE POWER RAIL simplified abstract
- International business machines corporation (20240161408). VIRTUAL REALITY DESIGN NAVIGATION USING A TEMPORAL COLLABORATION DEPENDENCY MAP simplified abstract
- International business machines corporation (20240162151). BURIED POWER RAIL VIA WITH REDUCED ASPECT RATIO DISCREPANCY simplified abstract
- International business machines corporation (20240164219). FAST SWITCHING MRAM HAVING AN ALUMINUM-MANGANESE-GERMANIUM FREE LAYER COMBINED WITH A CHROMIUM DIFFUSION BARRIER simplified abstract
- International business machines corporation (20240178284). SEMICONDUCTOR TRANSISTOR STRUCTURE HAVING AN EPITAXIAL OXIDE SPACER LAYER simplified abstract
- International business machines corporation (20240186317). NANOSHEET METAL-INSULATOR-METAL CAPACITOR simplified abstract
- International business machines corporation (20240186374). SEMICONDUCTOR DEVICE WITH VOID UNDER SOURCE/DRAIN REGION FOR BACKSIDE CONTACT simplified abstract
- International business machines corporation (20240194602). BACKSIDE POWER DISTRIBUTION NETWORK SUBSTRATE USING A LATTICE MATCHED ETCH STOP LAYER simplified abstract
- International business machines corporation (20240196628). MEMORY CELLS WITH DARLINGTON PAIR BIPOLAR JUNCTION TRANSISTOR SELECTOR DEVICES simplified abstract
- International business machines corporation (20240196755). REACTIVE SERIAL RESISTANCE REDUCTION FOR MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICES simplified abstract
- International business machines corporation (20240201654). EMBEDDED SENSOR CHIPS IN 3D AND 4D PRINTED STRUCTURES THROUGH SELECTIVE FILAMENT INFUSION simplified abstract
- International business machines corporation (20240202386). STRUCTURAL MONITORING WITH EMBEDDED SENSORS IN 3D AND 4D PRINTED STRUCTURES simplified abstract
- International business machines corporation (20240222375). HYBRID CMOS WITH FIN AND NANOSHEET ARCHITECTURES simplified abstract
- International business machines corporation (20240222395). BACKSIDE-CONNECTING VIA WITH NANOSHEET SPACERS FOR TRANSISTORS simplified abstract
- International business machines corporation (20240222426). NANOSHEET DEVICE WITH NITRIDE ISOLATION STRUCTURES simplified abstract
- International business machines corporation (20240224539). FERROELECTRIC-RAM WITH INTEGRATED DOMAIN REVERSAL CATALYST simplified abstract
- International business machines corporation (20240244982). ORDERED ALLOY MAGNETIC TUNNEL JUNCTION WITH SIMPLIFIED SEED STRUCTURE simplified abstract
- International business machines corporation (20240299883). COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR-BASED NANOFILTERS FOR DIAGNOSTICS simplified abstract
- International business machines corporation (20240304625). STACKED UPPER TRANSISTOR AND LOWER TRANSISTOR simplified abstract
- International business machines corporation (20240332294). FORKSHEET TRANSISTOR WITH DUAL DEPTH LATE CELL BOUNDARY CUT simplified abstract
- International business machines corporation (20240332296). FORKSHEET DEVICE WITH ACCURATE GATE EXTENSION FOR REDUCED PARASITIC CAPACITANCE simplified abstract
- International business machines corporation (20240334837). MAGNETIC TUNNEL JUNCTION FREE LAYER OF MULTIPLE MATERIALS simplified abstract
- International business machines corporation (20240423827). BITE GUARD WITH EMBEDDED PRESSURE SENSORS
- International business machines corporation (20240429283). BACKSIDE EPITAXY FOR SEMICONDUCTOR STRUCTURES
- International business machines corporation (20240429284). FORK SHEET DEVICE
- International business machines corporation (20250006780). EXTREMELY HIGH DENSITY SILICON CAPACITOR
