18080721. MEMORY CELLS WITH DARLINGTON PAIR BIPOLAR JUNCTION TRANSISTOR SELECTOR DEVICES simplified abstract (International Business Machines Corporation)

From WikiPatents
Jump to navigation Jump to search

MEMORY CELLS WITH DARLINGTON PAIR BIPOLAR JUNCTION TRANSISTOR SELECTOR DEVICES

Organization Name

International Business Machines Corporation

Inventor(s)

Alexander Reznicek of Troy NY (US)

Bahman Hekmatshoartabari of White Plains NY (US)

Praneet Adusumilli of Somerset NJ (US)

Fabio Carta of Pleasantville NY (US)

MEMORY CELLS WITH DARLINGTON PAIR BIPOLAR JUNCTION TRANSISTOR SELECTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18080721 titled 'MEMORY CELLS WITH DARLINGTON PAIR BIPOLAR JUNCTION TRANSISTOR SELECTOR DEVICES

Simplified Explanation: The patent application describes the integration of a phase change memory device or ReRAM device with a pair of bipolar junction transistors in a Sziklai Darlington transistor configuration to achieve a small unit cell footprint.

  • The integration involves pairing a vertical bipolar junction transistor with a lateral bipolar junction transistor.
  • The memory device is electrically connected to the collector of the lateral bipolar junction transistor.

Key Features and Innovation:

  • Integration of phase change memory or ReRAM device with bipolar junction transistors.
  • Utilization of Sziklai Darlington transistor configuration.
  • Pairing of vertical and lateral bipolar junction transistors.
  • Small unit cell footprint achieved.

Potential Applications: This technology can be applied in:

  • Memory storage devices.
  • Integrated circuits.
  • Computing systems.

Problems Solved:

  • Reducing unit cell footprint.
  • Enhancing memory device integration.
  • Improving overall system efficiency.

Benefits:

  • Compact design.
  • Improved performance.
  • Enhanced memory capabilities.

Commercial Applications: Potential commercial applications include:

  • Consumer electronics.
  • Data storage systems.
  • Semiconductor industry.

Prior Art: Readers can explore prior research on:

  • Integration of memory devices with transistors.
  • Sziklai Darlington transistor configurations.

Frequently Updated Research: Stay updated on advancements in:

  • Phase change memory technology.
  • ReRAM device integration.

Questions about the Technology: 1. What are the advantages of integrating memory devices with bipolar junction transistors? 2. How does the Sziklai Darlington transistor configuration contribute to the efficiency of the system?


Original Abstract Submitted

A phase change memory device or a ReRAM device is integrated with a pair of bipolar junction transistors, the pair of bipolar junction transistors being arranged in a Sziklai Darlington transistor configuration. A small unit cell footprint is obtained by pairing a vertical bipolar junction transistor with a lateral bipolar junction transistor, the memory device being electrically connected to the collector of the lateral bipolar junction transistor.