International business machines corporation (20240196628). MEMORY CELLS WITH DARLINGTON PAIR BIPOLAR JUNCTION TRANSISTOR SELECTOR DEVICES simplified abstract

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MEMORY CELLS WITH DARLINGTON PAIR BIPOLAR JUNCTION TRANSISTOR SELECTOR DEVICES

Organization Name

international business machines corporation

Inventor(s)

Alexander Reznicek of Troy NY (US)

Bahman Hekmatshoartabari of White Plains NY (US)

Praneet Adusumilli of Somerset NJ (US)

Fabio Carta of Pleasantville NY (US)

MEMORY CELLS WITH DARLINGTON PAIR BIPOLAR JUNCTION TRANSISTOR SELECTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240196628 titled 'MEMORY CELLS WITH DARLINGTON PAIR BIPOLAR JUNCTION TRANSISTOR SELECTOR DEVICES

The abstract describes a patent application where a phase change memory device or reram device is integrated with a pair of bipolar junction transistors in a Sziklai Darlington transistor configuration. A small unit cell footprint is achieved by combining a vertical bipolar junction transistor with a lateral bipolar junction transistor, with the memory device connected to the collector of the lateral bipolar junction transistor.

  • Key Features and Innovation:
  • Integration of phase change memory device or reram device with a pair of bipolar junction transistors in a Sziklai Darlington configuration.
  • Utilization of a vertical bipolar junction transistor and a lateral bipolar junction transistor to achieve a small unit cell footprint.
  • Electrical connection of the memory device to the collector of the lateral bipolar junction transistor.

Potential Applications: This technology can be applied in the development of high-density memory devices, particularly in applications where space is limited and efficiency is crucial.

Problems Solved: This innovation addresses the challenge of integrating memory devices with bipolar junction transistors in a compact and efficient manner.

Benefits:

  • Reduced footprint for memory devices.
  • Improved efficiency and performance in memory applications.
  • Enhanced integration capabilities for semiconductor devices.

Commercial Applications: This technology has potential commercial applications in the semiconductor industry for the development of advanced memory devices with improved performance and compact designs.

Prior Art: Readers can explore prior research on the integration of memory devices with bipolar junction transistors to understand the evolution of this technology.

Frequently Updated Research: Stay updated on the latest advancements in the integration of memory devices with bipolar junction transistors for potential improvements and new applications.

Questions about the Integration of Memory Devices with Bipolar Junction Transistors: 1. How does the Sziklai Darlington transistor configuration enhance the performance of the integrated memory device? 2. What are the specific challenges in connecting the memory device to the collector of the lateral bipolar junction transistor?


Original Abstract Submitted

a phase change memory device or a reram device is integrated with a pair of bipolar junction transistors, the pair of bipolar junction transistors being arranged in a sziklai darlington transistor configuration. a small unit cell footprint is obtained by pairing a vertical bipolar junction transistor with a lateral bipolar junction transistor, the memory device being electrically connected to the collector of the lateral bipolar junction transistor.