EPITAXIAL SOURCE/DRAIN STRUCTURE WITH HIGH DOPANT CONCENTRATION

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Chih Sheng Huang of New Taipei City (TW)]]

[[Category:Ming-Hua Yu of Hsinchu (TW)]]

[[Category:Yee-Chia Yeo of Hsinchu (TW)]]

EPITAXIAL SOURCE/DRAIN STRUCTURE WITH HIGH DOPANT CONCENTRATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 17824915 titled 'EPITAXIAL SOURCE/DRAIN STRUCTURE WITH HIGH DOPANT CONCENTRATION

Simplified Explanation

The patent application describes a semiconductor device with multiple nanostructures, a gate dielectric layer, a gate electrode, and a source/drain region.

The source/drain region has a unique structure with a polygonal-shaped upper portion and a column-like lower portion.
The polygonal-shaped upper portion has multiple facets, each with a specific crystallographic orientation.
The corner regions of the polygonal-shaped upper portion are adjacent to the intersection of two facets with a specific crystallographic orientation.
The corner regions have a higher dopant concentration compared to the epitaxial body region in contact with them.
The invention aims to improve the performance and efficiency of semiconductor devices by utilizing this specific structure and dopant concentration gradient in the source/drain region.

Original Abstract Submitted

A semiconductor device includes a plurality of nanostructures, a gate dielectric layer disposed on each nanostructure of the plurality of nanostructures, a gate electrode disposed on the gate dielectric layer and on the plurality of nanostructures, and a source/drain region adjacent to the nanostructures. The source/drain region includes an epitaxial structure including a polygonal-shaped upper portion and a column-like lower portion, wherein the polygonal-shaped upper portion has multiple facets, and each of the facets characterized by a () crystallographic orientation. The polygonal-shaped upper portion includes corner regions adjacent an intersection of two facets with a () crystallographic orientation and an epitaxial body region in contact with the corner regions. The corner regions are characterized by a first dopant concentration and the epitaxial body region is characterized by a second dopant concentration, and the first dopant concentration is higher than the second dopant concentration.