Taiwan semiconductor manufacturing company, ltd. (20250072099). REDUCED RESIDUE AT ETCHED STRUCTURE SIDEWALLS
REDUCED RESIDUE AT ETCHED STRUCTURE SIDEWALLS
Organization Name
taiwan semiconductor manufacturing company, ltd.
Inventor(s)
Ming-Ching Chang of Hsinchu (TW)
REDUCED RESIDUE AT ETCHED STRUCTURE SIDEWALLS
This abstract first appeared for US patent application 20250072099 titled 'REDUCED RESIDUE AT ETCHED STRUCTURE SIDEWALLS
Original Abstract Submitted
provided are devices and methods for forming devices. a method includes forming structures over a substrate; forming a layer between the structures; performing a first etch process to recess the layer to a surface having a serrated profile; optionally forming a film or films over the surface, wherein the film or films retain the serrated profile; depositing a material over the substrate; selectively masking the material to define a masked portion of the material and an unmasked portion of the material; and performing a second etch process to etch a portion of the material and form the material with a sidewall, wherein the second etch process uncovers the serrated profile, and wherein during the second etch process ions are reflected from the serrated profile.