SEMICONDUCTOR DEVICE AND METHOD

Organization Name

taiwan semiconductor manufacturing company, ltd.

Inventor(s)

Li-Fong Lin of Ji'an Township (TW)

Wan Chen Hsieh of Hsinchu (TW)

Chung-Ting Ko of Kaohsiung City (TW)

Tai-Chun Huang of Hsinchu (TW)

SEMICONDUCTOR DEVICE AND METHOD

This abstract first appeared for US patent application 20240413157 titled 'SEMICONDUCTOR DEVICE AND METHOD

Original Abstract Submitted

improved methods for forming gate isolation structures between portions of gate electrodes and semiconductor devices formed by the same are disclosed. in an embodiment, a method includes forming a channel structure over a substrate; forming a first isolation structure extending in a direction parallel to the channel structure; forming a dummy gate structure over the channel structure and the first isolation structure; depositing a hard mask layer over the dummy gate structure; etching the hard mask layer to form a first opening through the hard mask layer over the first isolation structure; conformally depositing a first dielectric layer over the hard mask layer, in the first opening, and over the dummy gate structure; etching the first dielectric layer to extend the first opening and expose the dummy gate structure; and etching the dummy gate structure to extend the first opening and expose the first isolation structure.