Taiwan semiconductor manufacturing co., ltd. (20250089286). FIN FIELD EFFECT TRANSISTOR DEVICE STRUCTURE
FIN FIELD EFFECT TRANSISTOR DEVICE STRUCTURE
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Ta-Chun Ma of New Taipei City (TW)
FIN FIELD EFFECT TRANSISTOR DEVICE STRUCTURE
This abstract first appeared for US patent application 20250089286 titled 'FIN FIELD EFFECT TRANSISTOR DEVICE STRUCTURE
Original Abstract Submitted
a fin field effect transistor device structure includes a fin structure formed over a substrate. the structure also includes a liner layer and an isolation structure surrounding the fin structure. the structure also includes a gate dielectric layer formed over the fin structure and the isolation structure. the structure also includes a gate structure formed over the gate dielectric layer. the structure also includes source/drain epitaxial structures formed on opposite sides of the gate structure. the fin structure includes a protruding portion laterally extending over the liner layer.