...supply voltage. The NFET switches in the fine trim ladder are driven by a unity gain buffer connected in feedback to generate a buffered reference voltage,
* The NFET switches in the fine trim ladder are driven by a unity gain buffer connected in feedback.
...
3 KB (450 words) - 05:55, 6 June 2024
...n+1) and a second conductor (see node n); a first plurality of metal-oxide-semiconductor field-effect transistors (MOSFET) switches arranged and controlled to selec
...generate a buffered reference voltage which is directly connected to bulk semiconductor regions of the second plurality of fine trim N-type MOSFET switches.
...
9 KB (1,230 words) - 11:41, 28 April 2025
= Patent Application 18000569 - SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING =
'''Title:''' SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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12 KB (1,689 words) - 13:53, 25 May 2025
...patent applications cover cutting-edge technologies in display technology, semiconductor design, mobile communication, and smart home solutions, driving innovation
Intel Corporation is a leader in chip technology, with patents covering semiconductor design, microarchitecture, and advanced manufacturing processes. Intel’s pa
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34 KB (4,229 words) - 03:18, 10 June 2024
...layer by applying a top-layer model which is unaffected by a plurality of semiconductor structures (claim 1) performing a Fourier Transform (FT) to obtain an FT sp
...o the particular technological environment of measuring the thickness of a semiconductor substrate layer using broadband illumination with a high level of generalit
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25 KB (3,760 words) - 16:33, 25 May 2025
...substrate processing apparatus (Figure 29,2-4; [0316]) that manufactures a semiconductor device ([0013]), the substrate processing apparatus (Figure 29,2-4; [0316])
...e submission under 37 CFR 1.114 (that is, restriction (including a lack of unity of invention) would not be proper) and all claims could have been finally r
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23 KB (3,160 words) - 17:52, 24 May 2025
...the system is capable of such use), comprising: a linear cavity (fig.1); a semiconductor saturable absorber mirror (SESAM) disposed at one end of the linear cavity
...e submission under 37 CFR 1.114 (that is, restriction (including a lack of unity of invention) would not be proper) and all claims could have been finally r
...
22 KB (3,172 words) - 14:49, 25 May 2025
= Patent Application 17661355 - SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD =
'''Title:''' SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF, DATA STORAGE DEVICE AND DATA RE
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26 KB (4,111 words) - 04:08, 28 April 2025
...n, wherein the stacked body includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer, light generated in the light-emitting la
...ctive index of the light-transmitting portion, and a surface of the second semiconductor layer in contact with the second electrode has an uneven structure.[[Catego
...
57 KB (8,788 words) - 08:06, 19 September 2024
...re also disclosed. additionally, a method of providing a tim, as well as a semiconductor package containing the tim are disclosed. providing the tim includes blendi
...conductor package containing the tim, and a computing device including the semiconductor package are also disclosed. the thermally reworkable polymer network of the
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81 KB (11,714 words) - 00:53, 13 December 2024
With keywords such as: memory, device, structure, data, region, gate, semiconductor, example, structures, and having in patent application abstracts.
...tched to victim path. these solutions may reduce or eliminate the use of a unity gain buffer and in-line high-pass filter, which may reduce design complexit
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75 KB (11,533 words) - 03:04, 19 March 2024
...250214181. SOLDER COMPOSITION, METHOD PREPARING SAME, METHOD MANUFACTURING SEMICONDUCTOR PACKAGE USING SOLDER COMPOSITION (Samsung Electronics ., .)]]
[[20250214192. SEMICONDUCTOR SUBSTRATE GRINDING APPARATUS (Samsung Electronics ., .)]]
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261 KB (39,535 words) - 17:33, 3 July 2025
With keywords such as: device, data, layer, based, configured, semiconductor, including, surface, image, and direction in patent application abstracts.
...ECTION DEVICE, PATTERN CORRECTION METHOD, AND PATTERN FORMATION METHOD FOR SEMICONDUCTOR DEVICES_simplified_abstract_(samsung electronics co., ltd.)]]
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184 KB (28,688 words) - 06:44, 12 September 2024
...corresponding to the calculated compensation data to an image data output unity, and the image data output unit configured to output the compensation data
...e first semiconductor layer; a second electrode line contacting the second semiconductor layer of the light-emitting element; and a first electrode line electricall
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198 KB (32,176 words) - 16:40, 3 August 2024
...an the first threshold; perform a layout review of tap spacing of selected semiconductor device components; and output safe operation area (soa) information indicat
...ectronic system including a semiconductor package and a circuit board. the semiconductor package and the circuit board may include contact structures configurable t
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214 KB (32,596 words) - 03:51, 17 February 2025
...system. in addition, according to the method, ecu resource waste caused by unity of an authentication result is avoided, costs and resources are saved, and
...g oxide layer and at an interface between the insulating oxide layer and a semiconductor substrate.[[Category:H01L29/786]][[Category:H01L27/092]][[Category:H01L29/0
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121 KB (18,479 words) - 10:12, 30 January 2024
[[20240067772. EPOXY COMPOUND, COMPOSITION PREPARED THEREFROM, SEMICONDUCTOR DEVICE PREPARED THEREFROM, ELECTRONIC DEVICE PREPARED THEREFROM, ARTICLE PR
...A SUBSTRATE USING SAME OR DIFFERENT WAVELENGTHS simplified abstract (Unity Semiconductor)]]
...
386 KB (55,261 words) - 03:15, 4 March 2024
...of Naples FL (US) for Granite Industries, Inc., Brent A. Johnston of West Unity OH (US) for Granite Industries, Inc.
...RUCTURE FOR SEMICONDUCTOR PROCESSING EQUIPMENT simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)]]
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295 KB (42,106 words) - 03:43, 22 January 2024
