Patent Application 17773985 - SUBSTRATE PROCESSING APPARATUS PROCESSING GAS - Rejection
Appearance
Patent Application 17773985 - SUBSTRATE PROCESSING APPARATUS PROCESSING GAS
Title: SUBSTRATE PROCESSING APPARATUS, PROCESSING GAS CONCENTRATING APPARATUS, AND SUBSTRATE PROCESSING METHOD
Application Information
- Invention Title: SUBSTRATE PROCESSING APPARATUS, PROCESSING GAS CONCENTRATING APPARATUS, AND SUBSTRATE PROCESSING METHOD
- Application Number: 17773985
- Submission Date: 2025-05-15T00:00:00.000Z
- Effective Filing Date: 2022-05-03T00:00:00.000Z
- Filing Date: 2022-05-03T00:00:00.000Z
- National Class: 118
- National Sub-Class: 715000
- Examiner Employee Number: 76225
- Art Unit: 1716
- Tech Center: 1700
Rejection Summary
- 102 Rejections: 0
- 103 Rejections: 1
Cited Patents
No patents were cited in this rejection.
Office Action Text
DETAILED ACTION Notice of Pre-AIA or AIA Status The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA . Continued Examination Under 37 CFR 1.114 A request for continued examination under 37 CFR 1.114, including the fee set forth in 37 CFR 1.17(e), was filed in this application after final rejection. Since this application is eligible for continued examination under 37 CFR 1.114, and the fee set forth in 37 CFR 1.17(e) has been timely paid, the finality of the previous Office action has been withdrawn pursuant to 37 CFR 1.114. Applicant's submission filed on April 24, 2025 has been entered. Claim Rejections - 35 USC § 103 The text of those sections of Title 35, U.S. Code not included in this action can be found in a prior Office action. Claims 1-9, 19 are rejected under 35 U.S.C. 103 as being unpatentable over Marganski; Paul J. et al. (US 20080191153 A1) in view of Tomasini; Pierre et al. (US 20070155138 A1). Marganski teaches a substrate processing apparatus (Figure 29,2-4; [0316]) that manufactures a semiconductor device ([0013]), the substrate processing apparatus (Figure 29,2-4; [0316]) comprising: a chamber (āfluid-utilizing process systemā; [0105]; Figure 4; 1588; Figure 29) in which a substrate ([0013]) is accommodated; a raw material tank (180; Figure 4) in which a raw material of a processing gas (186; Figure 3) for processing the substrate ([0013]) is accommodated; a mixed gas flow path (186; Figure 3,4) connected to the raw material tank (180; Figure 4); a concentration tank (ādispensing vesselā-194; Figure 3,4; 252; Figure 4; 460; Figure 9; 1570; Figure 29-Applicantās 51; Figure 1) connected to a downstream of the mixed gas flow path (186; Figure 3,4), and configured to accommodate a porous member (196-āmolecular sieveā; Figure 4; [0103]-Applicantās 5,53; Figure 1,6) containing a metal-organic framework configured such that the processing gas (186; Figure 3) contained in the mixed gas is preferentially adsorbed ([0103]), the metal-organic framework having a structure in which nanometer-sized pores are regularly and sterically arranged; a desorption mechanism (āheating jacketā; Figure 4; [0106]-Applicantās 52; Figure 1-āheating mechanismā; [0021]) configured to desorb ([0106]) the processing gas (186; Figure 3) adsorbed ([0103]) to the porous member (196-āmolecular sieveā; Figure 4; [0103]-Applicantās 5,53; Figure 1,6); and a concentration gas flow path (202-212; Figure 4) provided between the concentration tank (ādispensing vesselā-194; Figure 3,4; 252; Figure 4; 460; Figure 9; 1570; Figure 29-Applicantās 51; Figure 1) and the chamber (āfluid-utilizing process systemā; [0105]; Figure 4; 1588; Figure 29), and configured to allow the processing gas (186; Figure 3) desorbed ([0106]) from the porous member (196-āmolecular sieveā; Figure 4; [0103]-Applicantās 5,53; Figure 1,6) to flow to the chamber (āfluid-utilizing process systemā; [0105]; Figure 4; 1588; Figure 29); a processing gas (186; Figure 3) supply stop valve (204; Figure 4) provided in the concentration gas flow path (202-212; Figure 4); a discharge path (192-200-202; Figure 4) connected to an upstream side of the processing gas (186; Figure 3) supply stop valve (204; Figure 4) in the concentration gas flow path (202-212; Figure 4) and configured to discharge the carrier gas (āinert gasā; [0089]); and a carrier gas (āinert gasā; [0089]) discharging valve (192; Figure 3,4; [0104]) provided in the discharge path (192-200-202; Figure 4) ā claim 1. Applicantās above and below italicized claim text is considered intended use for the pending apparatus claims. The Examiner believes that the claimed concentration tank (ādispensing vesselā-194; Figure 3,4; 252; Figure 4; 460; Figure 9; 1570; Figure 29-Applicantās 51; Figure 1) configured to accommodate a porous member (196-āmolecular sieveā; Figure 4; [0103]-Applicantās 5,53; Figure 1,6) is the bound of the structural clause of this limitation in much the same way that a tank configured to accommodate a gas excludes the gas identity. Likewise, the claimed metal-organic framework, as the analogous gas identity, is not considered part of the structure of the claimed apparatus. Further, it has been held that claim language that simply specifies an intended use or field of use for the invention generally will not limit the scope of a claim (Walter , 618 F.2d at 769, 205 USPQ at 409; MPEP 2106). Additionally, in apparatus claims, intended use must result in a structural difference between the claimed invention and the prior art in order to patentably distinguish the claimed invention from the prior art. If the prior art structure is capable of performing the intended use, then it meets the claim (In re Casey,152 USPQ 235 (CCPA 1967); In re Otto , 136 USPQ 458, 459 (CCPA 1963); MPEP2115). Marganski further teaches: the substrate processing apparatus (Figure 29,2-4; [0316]) according to claim 1, wherein the raw material is liquid or solid, and the raw material tank (180; Figure 4) includes a vaporization mechanism (184; Figure 3) configured to vaporize the raw material of the processing gas (186; Figure 3) to obtain the processing gas (186; Figure 3), as claimed by claim 2 the substrate processing apparatus (Figure 29,2-4; [0316]) according to claim 1, wherein the desorption mechanism (āheating jacketā; Figure 4; [0106]-Applicantās 52; Figure 1-āheating mechanismā; [0021]) includes a porous member (196-āmolecular sieveā; Figure 4; [0103]-Applicantās 5,53; Figure 1,6) heating mechanism (āheating jacketā; Figure 4; [0106]-Applicantās 52; Figure 1-āheating mechanismā; [0021]) configured to heat the porous member (196-āmolecular sieveā; Figure 4; [0103]-Applicantās 5,53; Figure 1,6) in the concentration tank (ādispensing vesselā-194; Figure 3,4; 252; Figure 4; 460; Figure 9; 1570; Figure 29-Applicantās 51; Figure 1) to desorb ([0106]) the processing gas (186; Figure 3), as claimed by claim 3 the substrate processing apparatus (Figure 29,2-4; [0316]) according to claim 1, wherein the metal-organic framework is selected from the group consisting of metal-organic frameworks described in (a) to (d) below: (a) a metal-organic framework having a pore structure formed by accumulating a plurality of metal complexes each composed of a coordinate bond between a copper ion and 1,3,5-benzenetricarboxylic acid, (b) a metal-organic framework having a pore structure formed by accumulating a plurality of metal complexes each composed of a coordinate bond between an iron ion and 1,3,5-benzenetricarboxylic acid, (c) a metal-organic framework having a pore structure formed by accumulating a plurality of metal complexes each composed of a coordinate bond between a chromium ion and terephthalic acid, and (d) a metal-organic framework having a pore structure formed by accumulating a plurality of metal complexes each composed of a coordinate bond between a lanthanum ion and 1,3,5-tris(4-carboxyphenyl)benzene, as claimed by claim 4 the substrate processing apparatus (Figure 29,2-4; [0316]) according to claim 1, wherein the concentration gas flow path (202-212; Figure 4) includes a flow rate regulator (204; Figure 4) configured to regulate a flow rate of the processing gas (186; Figure 3), as claimed by claim 5 the substrate processing apparatus (Figure 29,2-4; [0316]) according to claim 1, wherein the substrate processing apparatus (Figure 29,2-4; [0316]) is used to form a film on the substrate ([0013]), and the raw material is a metal halide which is a raw material of the film, as claimed by claim 7 the substrate processing apparatus (Figure 29,2-4; [0316]) according to claim 7, wherein the metal halide is selected from a metal halide group consisting of aluminum chloride, tungsten pentachloride, and titanium tetrachloride, as claimed by claim 8 The substrate processing apparatus (Figure 29,2-4; [0316]) according to claim 1, further comprising: Marganskiās controller (142; Figure 2-Applicantās 100; Figure 1) configured to control an overall operation of the substrate processing apparatus (Figure 29,2-4; [0316]); wherein the concentration tank (ādispensing vesselā-194; Figure 3,4; 252; Figure 4; 460; Figure 9; 1570; Figure 29-Applicantās 51; Figure 1) is plural (āreagent supply vesselsā; claim 347) ā claim 19 Marganski only discusses Marganskiās carrier gas injection in Marganskiās [0089]. As a result, Marganski does not teach: a carrier gas supply unit configured to supply a carrier gas to the raw material tank (180; Figure 4), and through which a mixed gas of Marganskiās processing gas (186; Figure 3) obtained from Marganskiās raw material of Marganskiās processing gas (186; Figure 3) and a carrier gas flows therethrough ā claim 1 Marganskiās substrate processing apparatus (Figure 29,2-4; [0316]) according to claim 2, wherein Marganskiās vaporization mechanism (184; Figure 3) is a bubbling mechanism configured to bubble a carrier gas to Marganskiās raw material (182; Figure 3) that is in a liquid state, thereby vaporizing Marganskiās raw material (182; Figure 3), or Marganskiās raw material (182; Figure 3) heating mechanism (184; Figure 3) configured to heat Marganskiās raw material (182; Figure 3) that is in the liquid state or a solid state, thereby vaporizing Marganskiās raw material (182; Figure 3), as claimed by claim 6 a reaction gas supply unit (not shown by Applicants) configured to supply a reaction gas that reacts with Marganskiās processing gas (186; Figure 3) to form Marganskiās film and including Marganskiās reaction gas supply stop valve configured to supply Marganskiās reaction gas to Marganskiās chamber (āfluid-utilizing process systemā; [0105]; Figure 4; 1588; Figure 29) and stop Marganskiās supply; and a controller (Applicantās 100; Figure 1), wherein the controller (Applicantās 100; Figure 1) is configured to control Marganskiās processing gas (186; Figure 3) supply stop valve (204; Figure 4) and Marganskiās reaction gas supply stop valve (204; Figure 4) such that Marganskiās processing gas (186; Figure 3) and Marganskiās reaction gas are alternately supplied to Marganskiās chamber (āfluid-utilizing process systemā; [0105]; Figure 4; 1588; Figure 29) ā claim 9 Marganskiās controller (142; Figure 2-Applicantās 100; Figure 1) is configured to sequentially switch Marganskiās plurality of concentration tanks (ādispensing vesselā-194; Figure 3,4; 252; Figure 4; 460; Figure 9; 1570; Figure 29; āreagent supply vesselsā; claim 347-Applicantās 51; Figure 1) connected to Marganskiās concentration gas flow path (202-212; Figure 4) to supply Marganskiās processing gas to Marganskiās chamber (āfluid-utilizing process systemā; [0105]; Figure 4; 1588; Figure 29) while other of Marganskiās concentration tanks (ādispensing vesselā-194; Figure 3,4; 252; Figure 4; 460; Figure 9; 1570; Figure 29; āreagent supply vesselsā; claim 347-Applicantās 51; Figure 1) adsorb Marganskiās processing gas into the porous member (196-āmolecular sieveā; Figure 4; [0103]-Applicantās 5,53; Figure 1,6) - claim 19 Tomasini also teaches a film deposition apparatus (Figure 2) including: a carrier gas supply unit (75; Figure 2) configured to supply a carrier gas to the raw material tank (35; Figure 2), and through which a mixed gas of Tomasiniās processing gas (74; Figure 2) obtained from Tomasiniās raw material of Tomasiniās processing gas (74; Figure 2) and a carrier gas flows therethrough ā claim 1 Tomasiniās substrate processing apparatus according to claim 2, wherein Tomasiniās vaporization mechanism (35; Figure 2) is a bubbling mechanism configured to bubble a carrier gas to Tomasiniās raw material (74; Figure 2) that is in a liquid state, thereby vaporizing Tomasiniās raw material (74; Figure 2) - claim 6 a reaction gas supply unit (70, 82, 84, 80, 78, 76, 86; Figure 2- not shown by Applicants) configured to supply a reaction gas ([0014]) that reacts ([0014]) with Tomasiniās processing gas (74; Figure 2) to form Tomasiniās film and including Tomasiniās reaction gas supply stop valve (all valves are 31; Figure 2) configured to supply Tomasiniās reaction gas to Tomasiniās chamber (āfluid-utilizing process systemā; [0105]; Figure 4; 1588; Figure 29) and stop Tomasiniās supply; and a controller (90; Figure 2A; [0050]-Applicantās 100; Figure 1), wherein the controller (90; Figure 2A; [0050]-Applicantās 100; Figure 1) is configured to control Tomasiniās processing gas (74; Figure 2) supply stop valve (all valves are 31; Figure 2) and Tomasiniās reaction gas supply stop valve (all valves are 31; Figure 2) such that Tomasiniās processing gas (74; Figure 2) and Tomasiniās reaction gas ([0014]) are alternately (ā..etchants for cleaning..ā; [0056]) supplied to Tomasiniās chamber (12; Figure 2) ā claim 9 The substrate processing apparatus (Figure 2A) according to claim 1, further comprising: a controller (90; Figure 2A-Applicantās 100; Figure 1) configured to control an overall operation of the substrate processing apparatus (Figure 2A), and the controller (90; Figure 2A-Applicantās 100; Figure 1) is configured to sequentially switch (first, second, third reactions throughout; ā..etchants for cleaning..ā; [0056]) a plurality of reactants (Figure 2) connected to the concentration gas flow path (upstream of 12; Figure 2A) to supply the processing gas to the chamber (āreaction chamberā; Figure 2A) while other reactants (Figure 2) adsorb the processing gas over Tomasiniās sequential films ([0070]) - claim 19 It would have been obvious to one of ordinary skill in the art at the time the invention was made for Marganski to add Tomasiniās bubbler, carrier gas, and reaction supply units under optimized controller operation. Motivation for Marganski to add Tomasiniās bubbler and carrier gas and reaction supply units under optimized controller operation is for depositing silicon germanium films as taught by Tomasini ([0008], [0070]). Response to Arguments Applicant's arguments filed April 24, 2025 have been fully considered but they are not persuasive. Applicant states: ā First of all, Applicant notes that if the valve head 192-dispensing port 200-line 202 of Marganski is interpreted as the discharge path, the line 202-line 212 may not function as the concentrated gas path. That is, when the valve head 192 of Marganski is closed, the processing gas may not flow through the line 202-line 212 to the fluid-utilizing process system. ā With respect to the claimed clause, Applicant has not provided arguments how the Examinerās interpretation of Marganskiās teaching is not within the broadest reasonable interpretation. The Examiner again finds that Marganskiās discharge path (192-200-202; Figure 4) connected to an upstream side of the processing gas (186; Figure 3) supply stop valve (204; Figure 4) in the concentration gas flow path (202-212; Figure 4) and configured to discharge the carrier gas (āinert gasā; [0089]); and a carrier gas (āinert gasā; [0089]) discharging valve (192; Figure 3,4; [0104]) provided in the discharge path (192-200-202; Figure 4). The claimed invention is functionally and structurally indistinguishable with respect to the argued clause. Applicant states: ā In rejecting claim 1, the Office Action indicates that the limitations "a processing gas supply stop valve provided in the concentration gas flow path; a discharge path connected to an upstream side of the processing gas supply stop valve in the concentration gas flow path and configured to discharge the carrier gas; and a carrier gas discharging valve provided in the discharge path" in the claim is considered intended use for the apparatus claim. [Office Action, page 5] Applicant respectfully disagrees. ā And⦠ā Applicant notes that the limitations of claim 1 represents the structure of the apparatus indicating, for example, the connection between the processing gas supply stop valve, the discharge path, and the carrier gas discharging valve. In the meantime, Applicant believes that Marganski fails to disclose the structural limitation of claim 1 including, for example, "a discharge path connected to an upstream side of the processing gas supply stop valve in the concentration gas flow path and configured to discharge the carrier gas; and a carrier gas discharging valve provided in the discharge path," as specifically recited in claim 1. ā In response, Applicant is mistaken based on the Examinerās clear and unambiguous statements on record ā The Examiner stated in the prior actions that āApplicantās above and below italicized claim text is considered intended use for the pending apparatus claims.ā. And, as noted by the specific italicized font of record, the Examiner did not classify the above argued claim clause, with italicized text, as intended use. To the contrary, the Examiner has explicitly addressed the above argued clause as being met by the prior art structure. Applicants states: ā Referring to paragraph [0103] of Marganski, Applicant notes that Marganski merely discloses a physical adsorbent 196, such as activated carbon, molecular sieve, but does not disclose the specific physical structure of the physical adsorbent 196. As a result, Applicant believes that Marganski fails to disclose, for example, "the metal-organic framework having a structure in which nanometer-sized pores are regularly and sterically arranged," as specifically recited in amended claim 1 ā Specifically, the Examiner believes that the claimed concentration tank (ādispensing vesselā-194; Figure 3,4; 252; Figure 4; 460; Figure 9; 1570; Figure 29-Applicantās 51; Figure 1) configured to accommodate a porous member (196-āmolecular sieveā; Figure 4; [0103]-Applicantās 5,53; Figure 1,6) is the bound of the structural clause of this limitation, and not italisized, in much the same way that a tank configured to accommodate a gas excludes the gas identity. Likewise, the claimed metal-organic framework, as the analogous gas identity, is not considered part of the structure of the claimed apparatus. Conclusion The prior art made of record and not relied upon is considered pertinent to applicant's disclosure. Relevant art for gas delivery components upstream from reactors include US 20140290859 A1; US 20100003807 A1; US 20090087566 A1. All claims are identical to or patentably indistinct from, or have unity of invention with claims in the application prior to the entry of the submission under 37 CFR 1.114 (that is, restriction (including a lack of unity of invention) would not be proper) and all claims could have been finally rejected on the grounds and art of record in the next Office action if they had been entered in the application prior to entry under 37 CFR 1.114. Accordingly, THIS ACTION IS MADE FINAL even though it is a first action after the filing of a request for continued examination and the submission under 37 CFR 1.114. See MPEP § 706.07(b). Applicant is reminded of the extension of time policy as set forth in 37 CFR 1.136(a). A shortened statutory period for reply to this final action is set to expire THREE MONTHS from the mailing date of this action. In the event a first reply is filed within TWO MONTHS of the mailing date of this final action and the advisory action is not mailed until after the end of the THREE-MONTH shortened statutory period, then the shortened statutory period will expire on the date the advisory action is mailed, and any nonprovisional extension fee (37 CFR 1.17(a)) pursuant to 37 CFR 1.136(a) will be calculated from the mailing date of the advisory action. In no event, however, will the statutory period for reply expire later than SIX MONTHS from the mailing date of this final action. Any inquiry concerning this communication or earlier communications from the examiner should be directed to Examiner Rudy Zervigon whose telephone number is (571) 272- 1442. The examiner can normally be reached on a Monday through Thursday schedule from 8am through 6pm EST. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300. Any Inquiry of a general nature or relating to the status of this application or proceeding should be directed to the Chemical and Materials Engineering art unit receptionist at (571) 272-1700. If the examiner cannot be reached please contact the examiner's supervisor, Parviz Hassanzadeh, at (571) 272- 1435. Examiner interviews are available via telephone, in-person, and video conferencing using a USPTO supplied web-based collaboration tool. To schedule an interview, applicant is encouraged to use the USPTO Automated Interview Request (AIR) at http:/Awww.uspto.gov/interviewpractice. Information regarding the status of an application may be obtained from the Patent Application Information Retrieval (PAIR) system. Status information for published applications may be obtained from either Private PAIR or Public PAIR. Status information for unpublished applications is available through Private PAIR only. For more information about the PAIR system, see http://pair-direct.uspto.gov. Should you have questions on access to the Private PAIR system, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative or access to the automated information system, call 800-786-9199 (IN USA OR CANADA) or (571) 272-1000. /Rudy Zervigon/ Primary Examiner, Art Unit 1716