Qualcomm incorporated (20250132292). DEVICE WITH SIDE-BY-SIDE INTEGRATED CIRCUIT DEVICES
DEVICE WITH SIDE-BY-SIDE INTEGRATED CIRCUIT DEVICES
Organization Name
Inventor(s)
Aniket Patil of San Diego CA US
Joan Rey Villarba Buot of Escondido CA US
DEVICE WITH SIDE-BY-SIDE INTEGRATED CIRCUIT DEVICES
This abstract first appeared for US patent application 20250132292 titled 'DEVICE WITH SIDE-BY-SIDE INTEGRATED CIRCUIT DEVICES
Original Abstract Submitted
a device includes a substrate that includes a first layer stack including multiple metal layers and multiple dielectric layers. a first metal layer includes contacts disposed in a first region and configured to electrically connect to a first ic device, via pads disposed in a second region, and traces electrically connected to the first contacts and to the via pads. one or more of the traces extend between a pair of the via pads. the substrate also includes a second layer stack disposed on the second region of the first metal layer. the second layer stack includes a dielectric layer and a second metal layer on the dielectric layer. the second metal layer defines second contacts configured to electrically connect to one or more second ic devices. the second layer stack also includes conductive vias extending between the via pads and the second contacts.