Micron technology, inc. (20250086282). RANDOMIZED OR PROGRAM-ERASE-CYCLE- DEPENDENT PROGRAM VERIFY SCHEME

RANDOMIZED OR PROGRAM-ERASE-CYCLE- DEPENDENT PROGRAM VERIFY SCHEME

Organization Name

micron technology, inc.

Inventor(s)

Yu-Chung Lien of San Jose CA (US)

Lakshmi Kalpana K Vakati of Fremont CA (US)

Dheeraj Srinivasan of San Jose CA (US)

Ting Luo of Santa Clara CA (US)

Zhenming Zhou of San Jose CA (US)

RANDOMIZED OR PROGRAM-ERASE-CYCLE- DEPENDENT PROGRAM VERIFY SCHEME

This abstract first appeared for US patent application 20250086282 titled 'RANDOMIZED OR PROGRAM-ERASE-CYCLE- DEPENDENT PROGRAM VERIFY SCHEME

Original Abstract Submitted

in some implementations, a memory device may receive a single-level cell (slc) program command. the memory device may determine, based on at least one of a randomized variable associated with the memory or a program-erase cycle count associated with the memory, a program verify scheme to be performed when executing the slc program command. the program verify scheme may be one of a scheme associated with performing a program verify operation on all of the one or more subblocks of memory, a scheme associated with performing the program verify operation on a subblock associated with each odd word line (wl) to be programmed, or a scheme associated with performing the program verify operation on a subblock associated with each even wl to be programmed. the memory device may execute the slc program command by implementing the program verify scheme.