Micron technology, inc. (20250008750). SEMICONDUCTOR DEVICE WITH A THROUGH VIA BETWEEN REDISTRIBUTION LAYERS
SEMICONDUCTOR DEVICE WITH A THROUGH VIA BETWEEN REDISTRIBUTION LAYERS
Organization Name
Inventor(s)
Kunal R. Parekh of Boise ID US
SEMICONDUCTOR DEVICE WITH A THROUGH VIA BETWEEN REDISTRIBUTION LAYERS
This abstract first appeared for US patent application 20250008750 titled 'SEMICONDUCTOR DEVICE WITH A THROUGH VIA BETWEEN REDISTRIBUTION LAYERS
Original Abstract Submitted
a semiconductor device with a through via between redistribution layers is disclosed. the semiconductor device includes a stack of semiconductor dies coupled with first contact pads on a first redistribution layer. the first redistribution layer further includes a second contact pad located outside the footprint of the die stack and circuitry coupling the second contact pad to the first contact pads. a gap fill is disposed around the stack of semiconductor dies. a second redistribution layer is disposed at the stack of semiconductor dies and the gap fill. the second redistribution layer includes third contact pads coupled with the stack of semiconductor dies, a fourth contact pad disposed beyond the footprint of the stack of semiconductor dies, fifth contact pads opposite the third and fourth contact pads, and circuitry coupling the contact pads. a through via is disposed through the gap fill coupling the second and fourth contact pads.