Micron technology, inc. (20240176698). MEMORY COMPACTION MANAGEMENT IN MEMORY DEVICES simplified abstract

MEMORY COMPACTION MANAGEMENT IN MEMORY DEVICES

Organization Name

micron technology, inc.

Inventor(s)

Vamsi Pavan Rayaprolu of Santa Clara CA (US)

Mustafa N. Kaynak of San Diego CA (US)

Sivagnanam Parthasarathy of Carlsbad CA (US)

Patrick Khayat of San Diego CA (US)

Sampath Ratnam of San Jose CA (US)

Kishore Kumar Muchherla of Fremont CA (US)

Jiangang Wu of Milpitas CA (US)

James Fitzpatrick of Laguna Niguel CA (US)

MEMORY COMPACTION MANAGEMENT IN MEMORY DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240176698 titled 'MEMORY COMPACTION MANAGEMENT IN MEMORY DEVICES

Simplified Explanation

The patent application describes a system and method involving a memory device and a processing device that work together to ensure data integrity in memory cells. The processing device checks the data integrity of a set of memory cells, corrects any errors found, and copies the corrected data to another set of memory cells with a higher storage capacity.

• Memory device and processing device work together to maintain data integrity in memory cells.
• Data integrity check is performed on a set of memory cells to obtain a data integrity metric value.
• If the data integrity metric value meets a threshold criterion, error handling operation is performed to correct the data.
• Corrected data is then copied to a set of memory cells with a higher storage capacity.

Potential Applications

This technology can be applied in various industries where data integrity is crucial, such as:

• Data storage and retrieval systems
• Information security systems
• Critical infrastructure monitoring systems

Problems Solved

This technology addresses the following issues:

• Ensuring data integrity in memory cells
• Preventing data corruption and loss
• Improving overall system reliability

Benefits

The benefits of this technology include:

• Enhanced data reliability and accuracy
• Reduced risk of data loss or corruption
• Improved system performance and efficiency

Potential Commercial Applications

With its ability to ensure data integrity and improve system reliability, this technology can be utilized in various commercial applications, such as:

• Cloud storage services
• Financial institutions
• Healthcare systems

Possible Prior Art

One possible prior art in this field is the use of error correction codes (ECC) in memory systems to detect and correct errors in data storage. ECC has been widely used in various memory devices to enhance data reliability and integrity.

How does this technology compare to existing data integrity solutions in terms of performance and efficiency?

This article does not provide a direct comparison between this technology and existing data integrity solutions. Further research and testing would be needed to determine the performance and efficiency of this technology in comparison to other solutions.

What are the potential limitations or drawbacks of implementing this technology in practical systems?

The article does not discuss any potential limitations or drawbacks of implementing this technology. It would be important to consider factors such as cost, compatibility with existing systems, and scalability when integrating this technology into practical applications.

Original Abstract Submitted

systems and methods are disclosed including a memory device and a processing device operatively coupled to the memory device. the processing device can perform operations comprising performing a data integrity check on a source set of memory cells, configured to store a first number of bits per memory cell, to obtain a data integrity metric value; responsive to determining that the data integrity metric value satisfies the threshold criterion, performing an error handling operation on the data stored on the source set of memory cells to generate corrected data; and causing the memory device to copy data the corrected data to a destination set of memory cells of the memory device, wherein the destination set of memory cells are configured to store a second number of bits per memory cell, wherein the second number of bits per memory cells is greater than the first number of bits per memory cell.