STACKED TRANSISTORS WITH METAL VIAS

Organization Name

international business machines corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Biswanath Senapati of Mechanicville NY (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Shahrukh Khan of Sandy Hook CT (US)

STACKED TRANSISTORS WITH METAL VIAS

This abstract first appeared for US patent application 20240413085 titled 'STACKED TRANSISTORS WITH METAL VIAS

Original Abstract Submitted

a semiconductor structure includes a stacked device structure having a first field-effect transistor having a first source/drain region, and a second field-effect transistor vertically stacked above the first field-effect transistor, the second field-effect transistor having a second source/drain region and a gate region having first sidewall spacers. the stacked device structure further includes a frontside source/drain contact disposed on a first portion of a sidewall and a top surface of the second source/drain region, a first metal via connected to the frontside source/drain contact and to a first backside power line, and second sidewall spacers disposed on a first portion of the first metal via. the first sidewall spacers comprise a first dielectric material and the second sidewall spacers comprise a second dielectric material different than the first dielectric material.