Intel corporation (20250006434). FERROELECTRIC CAPACITOR WITH INSULATING THIN FILM
FERROELECTRIC CAPACITOR WITH INSULATING THIN FILM
Organization Name
Inventor(s)
Chia-Ching Lin of Portland OR US
Sou-Chi Chang of Portland OR US
Ashish Verma Penumatcha of Hillsboro OR US
Nazila Haratipour of Hillsboro OR US
Seung Hoon Sung of Portland OR US
Jack Kavalieros of Portland OR US
Uygar E. Avci of Portland OR US
Ian A. Young of Portland OR US
FERROELECTRIC CAPACITOR WITH INSULATING THIN FILM
This abstract first appeared for US patent application 20250006434 titled 'FERROELECTRIC CAPACITOR WITH INSULATING THIN FILM
Original Abstract Submitted
described is a ferroelectric-based capacitor that improves reliability of a ferroelectric memory by using low-leakage insulating thin film. in one example, the low-leakage insulating thin film is positioned between a bottom electrode and a ferroelectric oxide. in another example, the low-leakage insulating thin film is positioned between a top electrode and ferroelectric oxide. in yet another example, the low-leakage insulating thin film is positioned in the middle of ferroelectric oxide to reduce the leakage current and improve reliability of the ferroelectric oxide.
- Intel corporation
- Chia-Ching Lin of Portland OR US
- Sou-Chi Chang of Portland OR US
- Ashish Verma Penumatcha of Hillsboro OR US
- Nazila Haratipour of Hillsboro OR US
- Seung Hoon Sung of Portland OR US
- Owen Y. Loh of Portland OR US
- Jack Kavalieros of Portland OR US
- Uygar E. Avci of Portland OR US
- Ian A. Young of Portland OR US
- H01G7/06
- H10B12/00
- CPC H01G7/06