20250185265. Silicon Controlled R (GlobalFoundries U.S. .)
SILICON CONTROLLED RECTIFIER INTEGRATED HETEROJUNCTION BIPOLAR TRANSISTOR
Abstract: the present disclosure relates to semiconductor structures and, more particularly, to a heterojunction bipolar transistor integrated silicon controlled rectifier and methods of manufacture. the structure includes: a first region having a first dopant type provided in a semiconductor substrate; a second region having a second dopant type provided in the semiconductor substrate; an isolation region between the first region and the second region; a first semiconductor layer vertically contacting the first region, the first semiconductor layer having a dopant type opposite from the first dopant type; a second semiconductor layer vertically contacting the second region, the second semiconductor layer having a dopant type opposite from the second dopant type; a polysilicon material vertically contacting the first semiconductor layer; and a single crystalline semiconductor material vertically contacting the first semiconductor layer and the second semiconductor layer.
Inventor(s): Anindya Nath, Uppili S. Raghunathan, Rajendran Krishnasamy, Sagar Premnath Karalkar, Alexander M. Derrickson, Vibhor Jain
CPC Classification: H10D10/80 (No explanation available)
Search for rejections for patent application number 20250185265
- Patent Applications
- GlobalFoundries U.S. Inc.
- CPC H10D10/80
- Anindya Nath of Essex Junction VT US
- Uppili S. Raghunathan of Essex Junction VT US
- Rajendran Krishnasamy of Essex Junction VT US
- Sagar Premnath Karalkar of Essex Junction VT US
- Alexander M. Derrickson of Saratoga Springs NY US
- Vibhor Jain of Clifton Park NY US