Category:Ting-Hsiang Hung of Beaverton OR (US)
Ting-Hsiang Hung
Ting-Hsiang Hung from Beaverton OR (US) has applied for patents in technology areas such as H01L21/762, H01L21/768, H01L23/48 with intel corporation.
Patents
Subcategories
This category has the following 2 subcategories, out of 2 total.
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Pages in category "Ting-Hsiang Hung of Beaverton OR (US)"
The following 12 pages are in this category, out of 12 total.
1
- 17940194. EPITAXIAL REGIONS EXTENDING BETWEEN INNER GATE SPACERS simplified abstract (Intel Corporation)
- 17940195. BARRIER LAYER FOR DIELECTRIC RECESS MITIGATION simplified abstract (Intel Corporation)
- 17940944. FIN TRIM PLUG STRUCTURES WITH METAL FOR IMPARTING CHANNEL STRESS simplified abstract (Intel Corporation)
- 18092152. TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL SUPPORTS simplified abstract (Intel Corporation)
- 18216493. PERFORMANCE OPTIMIZATION OF TRANSISTORS SHARING CHANNEL STRUCTURES OF VARYING WIDTH (Intel Corporation)
- 18463436. LATERAL ETCHING PROCESS TO REMOVE METAL GATE FOOT STRUCTURES (Intel Corporation)
- 18466246. THROUGH-GATE STRUCTURE WITH AN AIRGAP SPACER IN A SEMICONDUCTOR DEVICE (Intel Corporation)
I
- Intel corporation (20240105718). INTEGRATED CIRCUIT DEVICES WITH PROTECTION LINER BETWEEN DOPED SEMICONDUCTOR REGIONS simplified abstract
- Intel corporation (20240105770). NECKED RIBBON FOR BETTER N WORKFUNCTION FILLING AND DEVICE PERFORMANCE simplified abstract
- Intel corporation (20240222484). TRANSISTOR WITH CHANNEL MATERIAL IN A STACK WITH INSULATOR MATERIAL SUPPORTS simplified abstract
- Intel corporation (20250087530). LATERAL ETCHING PROCESS TO REMOVE METAL GATE FOOT STRUCTURES
- Intel corporation (20250089310). THROUGH-GATE STRUCTURE WITH AN AIRGAP SPACER IN A SEMICONDUCTOR DEVICE