Category:Pitamber Shukla of Boise ID (US)
Pitamber Shukla
Pitamber Shukla from Boise ID (US) has applied for patents in technology areas such as G06F11/10, G06F3/06, G06F11/07 with Micron Technology, Inc..
Patents
Subcategories
This category has only the following subcategory.
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Pages in category "Pitamber Shukla of Boise ID (US)"
The following 22 pages are in this category, out of 22 total.
1
- 17848061. MEMORY OPERATION BASED ON BLOCK-ASSOCIATED TEMPERATURE simplified abstract (MICRON TECHNOLOGY, INC.)
- 17877779. MEMORY SYSTEM FAILURE DETECTION AND SELF RECOVERY OF MEMORY DICE simplified abstract (Micron Technology, Inc.)
- 17897438. DETERMINING READ VOLTAGE OFFSET IN MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17897441. MANAGING DEFECTIVE BLOCKS DURING MULTI-PLANE PROGRAMMING OPERATIONS IN MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 18393354. MANAGING TRAP-UP IN A MEMORY SYSTEM simplified abstract (Micron Technology, Inc.)
- 18443584. DYNAMIC ERASE VOLTAGE STEP simplified abstract (Micron Technology, Inc.)
- 18507872. PROBABILISTIC DATA INTEGRITY SCANS USING RISK FACTOR ESTIMATION simplified abstract (Micron Technology, Inc.)
- 18528337. DEBIASING SCHEME FOR PARTIAL BLOCK ERASE BASED ON WORD LINE GROUPS simplified abstract (Micron Technology, Inc.)
- 18591368. PARTIALLY PROGRAMMED BLOCK READ OPERATIONS simplified abstract (Micron Technology, Inc.)
- 18608652. MEMORY SYSTEM FAILURE DETECTION AND SELF RECOVERY OF MEMORY DICE simplified abstract (MICRON TECHNOLOGY, INC.)
- 18755033. DETERMINING READ VOLTAGE OFFSET IN MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 18954008. READ CALIBRATION BY SECTOR OF MEMORY (Micron Technology, Inc.)
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- Micron technology, inc. (20240177760). PROBABILISTIC DATA INTEGRITY SCANS USING RISK FACTOR ESTIMATION simplified abstract
- Micron technology, inc. (20240194270). DEBIASING SCHEME FOR PARTIAL BLOCK ERASE BASED ON WORD LINE GROUPS simplified abstract
- Micron technology, inc. (20240220375). MEMORY SYSTEM FAILURE DETECTION AND SELF RECOVERY OF MEMORY DICE simplified abstract
- Micron technology, inc. (20240233842). MANAGING TRAP-UP IN A MEMORY SYSTEM simplified abstract
- Micron technology, inc. (20240281148). DYNAMIC ERASE VOLTAGE STEP simplified abstract
- Micron technology, inc. (20240303187). PARTIALLY PROGRAMMED BLOCK READ OPERATIONS simplified abstract
- Micron technology, inc. (20240347084). DETERMINING READ VOLTAGE OFFSET IN MEMORY DEVICES simplified abstract
- Micron technology, inc. (20240412803). REDUCING PARTIAL BLOCK PROGRAMMING USING DYNAMIC TRIM SETTINGS
- Micron Technology, Inc. (20250086058). READ CALIBRATION BY SECTOR OF MEMORY
- Micron technology, inc. (20250086058). READ CALIBRATION BY SECTOR OF MEMORY