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Category:Feng Gao

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Feng Gao

Executive Summary

Feng Gao is an inventor who has filed 1 patents. Their primary areas of innovation include No explanation available (1 patents), {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz ( (1 patents), {the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides (adhesion layers or buffer layers (1 patents), and they have worked with companies such as United Semiconductor (Xiamen) Co., Ltd. (1 patents). Their most frequent collaborators include (1 collaborations), (1 collaborations), (1 collaborations).

Patent Filing Activity

Technology Areas

List of Technology Areas

  • H10D30/027 (No explanation available): 1 patents
  • H01L21/0217 ({the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz (): 1 patents
  • H01L21/02211 ({the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides (adhesion layers or buffer layers): 1 patents
  • H01L21/02271 ({deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (): 1 patents
  • H01L21/02318 ({post-treatment}): 1 patents
  • H01L21/31116 ({by dry-etching}): 1 patents

Companies

List of Companies

  • United Semiconductor (Xiamen) Co., Ltd.: 1 patents

Collaborators

Subcategories

This category has the following 5 subcategories, out of 5 total.

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