Category:Anand Murthy of Portland OR US
Anand Murthy
Anand Murthy from Portland OR US has applied for patents in technology areas such as H01L23/522, H01L23/528 with intel corporation.
Patents
Pages in category "Anand Murthy of Portland OR US"
The following 11 pages are in this category, out of 11 total.
1
- 18469810. VIA STRUCTURE WITH IMPROVED SUBSTRATE GROUNDING (Intel Corporation)
- 18471705. AIRGAP SPACER BETWEEN GATE ELECTRODE AND SOURCE OR DRAIN CONTACT (Intel Corporation)
- 18471710. DIELECTRIC ISOLATION BETWEEN EPITAXIAL REGIONS AND SUBFIN REGIONS (Intel Corporation)
- 18980999. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING NANOWIRES WITH TIGHT VERTICAL SPACING (INTEL CORPORATION)
I
- Intel corporation (20240258427). SOURCE OR DRAIN STRUCTURES FOR GERMANIUM N-CHANNEL DEVICES
- Intel corporation (20250006790). TRANSISTORS WITH ANTIMONY AND PHOSPHORUS DOPED EPITAXIAL SOURCE/DRAIN LAYERS
- Intel corporation (20250006806). HIGH CONDUCTIVITY TRANSISTOR CONTACTS COMPRISING GALLIUM ENRICHED LAYER
- Intel corporation (20250096114). VIA STRUCTURE WITH IMPROVED SUBSTRATE GROUNDING
- Intel corporation (20250107156). DIELECTRIC ISOLATION BETWEEN EPITAXIAL REGIONS AND SUBFIN REGIONS
- Intel corporation (20250107212). AIRGAP SPACER BETWEEN GATE ELECTRODE AND SOURCE OR DRAIN CONTACT
- Intel corporation (20250113550). GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING NANOWIRES WITH TIGHT VERTICAL SPACING