Category:Anand Murthy of Portland OR (US)
Anand Murthy
Anand Murthy from Portland OR (US) has applied for patents in technology areas such as H01L21/762, H01L21/768, H01L23/48 with intel corporation.
Patents
Subcategories
This category has the following 2 subcategories, out of 2 total.
C
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Pages in category "Anand Murthy of Portland OR (US)"
The following 24 pages are in this category, out of 24 total.
1
- 17523711. CLADDING AND CONDENSATION FOR STRAINED SEMICONDUCTOR NANORIBBONS simplified abstract (Intel Corporation)
- 17847559. GATE ALL AROUND TRANSISTORS ON ALTERNATE SUBSTRATE ORIENTATION simplified abstract (Intel Corporation)
- 18345931. TRANSISTORS WITH ANTIMONY AND PHOSPHORUS DOPED EPITAXIAL SOURCE/DRAIN LAYERS (Intel Corporation)
- 18346087. HIGH CONDUCTIVITY TRANSISTOR CONTACTS COMPRISING GALLIUM ENRICHED LAYER (Intel Corporation)
- 18395192. TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR AND METHODS OF FABRICATION simplified abstract (Intel Corporation)
- 18463436. LATERAL ETCHING PROCESS TO REMOVE METAL GATE FOOT STRUCTURES (Intel Corporation)
- 18466246. THROUGH-GATE STRUCTURE WITH AN AIRGAP SPACER IN A SEMICONDUCTOR DEVICE (Intel Corporation)
I
- Intel corporation (20240105248). TCAM WITH HYSTERETIC OXIDE MEMORY CELLS simplified abstract
- Intel corporation (20240105582). LOW TEMPERATURE CAPACITIVELY COUPLED DEVICE FOR LOW NOISE CIRCUITS simplified abstract
- Intel corporation (20240105584). BURIED VIA THROUGH FRONT-SIDE AND BACK-SIDE METALLIZATION LAYERS WITH OPTIONAL CYLINDRICAL MIM CAPACITOR simplified abstract
- Intel corporation (20240105585). SOLID STATE ELECTROLYTES FOR BACKEND SUPERCAPACITORS simplified abstract
- Intel corporation (20240105635). SELF-ALIGNMENT LAYER WITH LOW-K MATERIAL PROXIMATE TO VIAS simplified abstract
- Intel corporation (20240105677). RECONSTITUTED WAFER WITH SIDE-STACKED INTEGRATED CIRCUIT DIE simplified abstract
- Intel corporation (20240105700). SILICON CARBIDE POWER DEVICES INTEGRATED WITH SILICON LOGIC DEVICES simplified abstract
- Intel corporation (20240105811). FERROELECTRIC TUNNEL JUNCTION DEVICES FOR LOW VOLTAGE AND LOW TEMPERATURE OPERATION simplified abstract
- Intel corporation (20240105860). LOW TEMPERATURE VARACTORS USING VARIABLE CAPACITANCE MATERIALS simplified abstract
- Intel corporation (20240136277). TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR AND METHODS OF FABRICATION simplified abstract
- Intel corporation (20240186378). GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING EMBEDDED GESNB SOURCE OR DRAIN STRUCTURES simplified abstract
- Intel corporation (20240258427). SOURCE OR DRAIN STRUCTURES FOR GERMANIUM N-CHANNEL DEVICES simplified abstract
- Intel corporation (20250087530). LATERAL ETCHING PROCESS TO REMOVE METAL GATE FOOT STRUCTURES
- Intel corporation (20250089310). THROUGH-GATE STRUCTURE WITH AN AIRGAP SPACER IN A SEMICONDUCTOR DEVICE