Applied materials, inc. (20240420952). NESTED-LOOP PLASMA ENHANCED ATOMIC LAYER DEPOSITION
NESTED-LOOP PLASMA ENHANCED ATOMIC LAYER DEPOSITION
Organization Name
Inventor(s)
Bhaskar Soman of San Jose CA (US)
Supriya Ghosh of San Jose CA (US)
Zeqing Shen of San Jose CA (US)
Susmit Singha Roy of Campbell CA (US)
Abhijit Basu Mallick of Sunnyvale CA (US)
NESTED-LOOP PLASMA ENHANCED ATOMIC LAYER DEPOSITION
This abstract first appeared for US patent application 20240420952 titled 'NESTED-LOOP PLASMA ENHANCED ATOMIC LAYER DEPOSITION
Original Abstract Submitted
exemplary methods of semiconductor processing may include iteratively repeating a deposition cycle several times on a substrate disposed within a processing region of a semiconductor processing chamber. each deposition cycle may include depositing a silicon-containing material on the substrate and exposing the silicon-containing material to a first oxygen plasma to convert the silicon-containing material to a silicon-and-oxygen-containing material. after the iterative repeating of the deposition cycle, the method may include performing a densification operation by exposing the silicon-and-oxygen-containing material to a second oxygen plasma to produce a densified silicon-and-oxygen-containing material where the quality of the densified silicon-and-oxygen-containing material is greater than the silicon-and-oxygen-containing material. the method may further include iteratively repeating the iteratively repeated deposition cycles and the densification operation several times.