Applied Materials, Inc. patent applications on February 6th, 2025
Patent Applications by Applied Materials, Inc. on February 6th, 2025
Applied Materials, Inc.: 21 patent applications
Applied Materials, Inc. has applied for patents in the areas of H01L21/02 (5), H01J37/32 (5), H01L21/311 (3), H01L21/67 (3), C23C16/455 (3) H10K59/122 (2), H01L21/0332 (2), H01L21/02274 (2), H01L21/02049 (1), H01L29/1054 (1)
With keywords such as: substrate, chamber, material, structure, processing, disposed, surface, deposition, layer, and dielectric in patent application abstracts.
Patent Applications by Applied Materials, Inc.
20250041908. FLUID AERATOR TO REDUCE SPLASHING_simplified_abstract_(applied materials, inc.)
Inventor(s): Jason A. RYE of Kalispell MT (US) for applied materials, inc., Alex DURADO of Kalispell MT (US) for applied materials, inc.
IPC Code(s): B08B3/04, B01F23/23, B01F23/232, B01F25/452, B08B13/00
CPC Code(s): B08B3/04
Abstract: embodiments herein provide a semiconductor substrate cleaning chamber. the cleaning chamber includes side walls that partially define a cleaning volume, a pedestal disposed within the side walls, and a cleaning arm disposed above the pedestal. the cleaning arm includes a nozzle assembly disposed on a nozzle end of the cleaning arm. the nozzle assembly includes a housing, and a body disposed within the housing and having a gas port disposed through the body and configured to aerate a fluid passing through the nozzle assembly.
Inventor(s): Chih-Yang CHANG of Santa Clara CA (US) for applied materials, inc., Shannon WANG of Santa Clara CA (US) for applied materials, inc., Dien-yeh WU of San Jose CA (US) for applied materials, inc., Yao-Hung YANG of Santa Clara CA (US) for applied materials, inc., Tom K. CHO of Los Altos CA (US) for applied materials, inc.
IPC Code(s): B23K26/362, H01L21/67
CPC Code(s): B23K26/362
Abstract: embodiments of methods of creating a gasket for parts used in semiconductor processing are provided herein. in some embodiments, a method of creating a gasket includes: applying an elastomer material on a surface of a part used for substrate processing; and laser engraving the elastomer material to form the elastomer gasket to define a sealing surface on the part.
20250041985. PAD CONDITIONING DISK GIMBALING CONTROL_simplified_abstract_(applied materials, inc.)
Inventor(s): Justin H. WONG of Pleasanton CA (US) for applied materials, inc.
IPC Code(s): B24B37/005, B24B53/017
CPC Code(s): B24B37/005
Abstract: embodiments of the disclosure provided herein include a system and method for pad conditioning in chemical mechanical polishing. in an embodiment, a pad conditioning assembly includes a base, an arm coupled to the base, a conditioning head coupled to the arm, a gimbal control assembly including at least one electromagnet coupled to the conditioning head, a gimbal flexure configured to couple to a pad conditioning disk, and a gimbal control feature coupled to the gimbal flexure, and a controller configured to control operation of the pad conditioning assembly. in another embodiment, a method of conditioning a pad for chemical mechanical polishing includes initiating conditioning of a pad on a platen using a pad conditioning assembly, determining if a distance exceeds a predetermined threshold, and biasing a pad conditioning disk of the pad conditioning assembly.
Inventor(s): Sze Chieh Yvonne Tan of Singapore (SG) for applied materials, inc., Vicknesh Sahmuganathan of Singapore (SG) for applied materials, inc., John Sudijono of Singapore (SG) for applied materials, inc., Philip Allan Kraus of San Jose CA (US) for applied materials, inc., Christian Valencia of Alhambra CA (US) for applied materials, inc., Thai Cheng Chua of Cupertino CA (US) for applied materials, inc.
IPC Code(s): C23C16/27, C23C16/02, C23C16/511, C23C16/52
CPC Code(s): C23C16/274
Abstract: embodiments include a modular high-frequency emission source for growth of a low roughness nanocrystalline diamond film. in an embodiment, a method of fabricating a nanocrystalline diamond (ncd) film includes loading a nanodiamond-seeded silicon wafer or a bare silicon wafer that has been surface-treated and incubated into a microwave plasma-enhanced chemical vapor deposition (mwpecvd) chamber, and processing the nanodiamond-seeded silicon wafer or the bare silicon wafer that has been surface-treated and incubated with a plasma of ch(y≥x), coand h, at power greater than 50 w, to form a layer of nanocrystalline diamond thereon.
Inventor(s): William Durand of San Francisco CA (US) for applied materials, inc., Abdullah Zafar of Santa Clara CA (US) for applied materials, inc., Usman Chowdhury of Santa Clara CA (US) for applied materials, inc., Amir Bayati of San Jose CA (US) for applied materials, inc., Farzad Houshmand of Mountain View CA (US) for applied materials, inc., David J. Coumou of Webster NY (US) for applied materials, inc., Kasturi Sarang of San Jose CA (US) for applied materials, inc., Kenric Choi of San Jose CA (US) for applied materials, inc.
IPC Code(s): C23C16/455, G01N21/3504
CPC Code(s): C23C16/45557
Abstract: vapor concentration sensors for deposition process or deposition chamber condition monitoring are described. in an example, a deposition system includes a deposition chamber, a deposition precursor source coupled to an inlet of the deposition chamber, and a non-dispersive infrared (ndir) vapor concentration sensor between the deposition precursor source and the deposition chamber.
20250045900. EDGE DEFECT DETECTION VIA IMAGE ANALYTICS_simplified_abstract_(applied materials, inc.)
Inventor(s): Yash Chhabra of Bangalore (IN) for applied materials, inc., Abyaya Dhar of Bangalore (IN) for applied materials, inc., Joseph Liu of Zhubei City (TW) for applied materials, inc., Yi Nung Wu of Taoyuan City (TW) for applied materials, inc., Boon Sen Chan of Singapore (SG) for applied materials, inc., Sidda Reddy Kurakula of Bengaluru (IN) for applied materials, inc., Chandrasekhar Roy of Bangalore (IN) for applied materials, inc.
IPC Code(s): G06T7/00, G01N21/95
CPC Code(s): G06T7/0004
Abstract: a method includes identifying one or more images of an edge of a susceptor pocket formed in an upper surface of a susceptor of a substrate processing system. an angle identification component is disposed in the susceptor pocket. the method further includes causing, based on the one or more images, performance of an action associated with the susceptor.
20250045932. CLOG DETECTION VIA IMAGE ANALYTICS_simplified_abstract_(applied materials, inc.)
Inventor(s): Yash Chhabra of Bangalore (IN) for applied materials, inc., Abyaya Dhar of Bangalore (IN) for applied materials, inc., Boon Sen Chan of Singapore (SG) for applied materials, inc., Yenwei Hung of Taoyuan City (TW) for applied materials, inc., Sidda Reddy Kurakula of Bengaluru (IN) for applied materials, inc., Chandrasekhar Roy of Bangalore (IN) for applied materials, inc., Chih Chuan Wang of Hsinchu City (TW) for applied materials, inc.
IPC Code(s): G06T7/194, G06T7/00
CPC Code(s): G06T7/194
Abstract: a method includes determining, by a processing device based on an image of a substrate processing equipment part that forms holes, a clockwise holes spiral and an anti-clockwise holes spiral of the holes. the method further includes identifying, by the processing device, a first subset of the holes in at least one of the clockwise holes spiral or the anti-clockwise holes spiral that are at least partially clogged. a corrective action associated with the substrate processing equipment part is to be performed based on the first subset of the holes that are at least partially clogged.
Inventor(s): David Alexander SELL of Santa Clara CA (US) for applied materials, inc., Sihui HE of Santa Clara CA (US) for applied materials, inc., Kevin MESSER of Mountain View CA (US) for applied materials, inc., Kunal SHASTRI of Santa Clara CA (US) for applied materials, inc., Jinxin FU of Fremont CA (US) for applied materials, inc., Samarth BHARGAVA of Saratoga CA (US) for applied materials, inc.
IPC Code(s): G06T19/00, G02B5/04, G02B6/10
CPC Code(s): G06T19/006
Abstract: the present disclosure relates to augmented reality devices and related methods. the augmented reality devices include a projection system. the projection system includes a projector including a major axis. the projected is configured to project an image along the major axis. a prism is configured to refract the image. the image includes a first spectrum, a second spectrum, and a third spectrum. a waveguide is disposed at a wrap angle from a plane formed from the major axis of the projector. the waveguide includes an input coupler, and an output coupler.
Inventor(s): Yue GUO of Redwood City CA (US) for applied materials, inc., Yang YANG of San Diego CA (US) for applied materials, inc., A N M Wasekul AZAD of Santa Clara CA (US) for applied materials, inc., Kartik RAMASWAMY of San Jose CA (US) for applied materials, inc., Nicolas J. BRIGHT of Arlington WA (US) for applied materials, inc.
IPC Code(s): H01J37/32
CPC Code(s): H01J37/32183
Abstract: embodiments of the present disclosure relate to a system and methods for processing a substrate in a plasma processing system. in an embodiment a plasma processing system is provided that includes a radio frequency (rf) generator coupled to a substrate support base disposed within the plasma processing system and configured to deliver an rf signal to the substrate support base, a pulsed voltage (pv) waveform generator coupled the substrate support base and configured to deliver a pv waveform to the substrate support base while the rf signal is delivered to the substrate support base, and a high voltage supply coupled to a biasing electrode of the plasma processing system and configured to deliver a chucking voltage to a biasing electrode disposed with the plasma processing system.
Inventor(s): Changling Li of Santa Clara CA (US) for applied materials, inc., Lai Zhao of Campbell CA (US) for applied materials, inc., Gaku Furuta of Sunnyvale CA (US) for applied materials, inc., Soo Young Choi of Fremont CA (US) for applied materials, inc., Robin L. Tiner of Santa Cruz CA (US) for applied materials, inc., David Atchley of Livermore CA (US) for applied materials, inc., Ganesh Babu Chandrasekaran of Santa Clara CA (US) for applied materials, inc.
IPC Code(s): H01J37/32, B23B35/00, C23C16/455, C23C16/50
CPC Code(s): H01J37/3244
Abstract: a method can include removing material from a first side of a diffuser block to form a back-side gradient surface of a diffuser, wherein the back-side gradient surface is a first concave surface, after removing the material from the first side, removing material from a second side of the diffuser block to form a front-side gradient surface of the diffuser, wherein the front-side gradient surface is a second concave surface, and forming a plurality of opening structures through the front-side gradient surface to the back-side gradient surface.
20250046596. INTEGRATED EPITAXY AND PRECLEAN SYSTEM_simplified_abstract_(applied materials, inc.)
Inventor(s): Lara HAWRYLCHAK of Gilroy CA (US) for applied materials, inc., Schubert S. CHU of San Francisco CA (US) for applied materials, inc., Tushar MANDREKAR of San Jose CA (US) for applied materials, inc., Errol C. SANCHEZ of Tracy CA (US) for applied materials, inc., Kin Pong LO of Fremont CA (US) for applied materials, inc.
IPC Code(s): H01L21/02, B08B7/00, C23C16/02, C23C16/24, C23C16/30, C23C16/455, C23C16/505, C23C16/54, C30B25/02, H01J37/32, H01L21/3213, H01L21/67, H01L21/687
CPC Code(s): H01L21/02049
Abstract: implementations of the present disclosure generally relates to a transfer chamber coupled to at least one vapor phase epitaxy chamber a plasma oxide removal chamber coupled to the transfer chamber, the plasma oxide removal chamber comprising a lid assembly with a mixing chamber and a gas distributor; a first gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a second gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a third gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; and a substrate support with a substrate supporting surface; a lift member disposed in a recess of the substrate supporting surface and coupled through the substrate support to a lift actuator; and a load lock chamber coupled to the transfer chamber.
20250046599. DIAMOND-LIKE CARBON GAP FILL_simplified_abstract_(applied materials, inc.)
Inventor(s): Jialiang WANG of Santa Clara CA (US) for applied materials, inc., Soonil LEE of Santa Clara CA (US) for applied materials, inc., Eswaranand VENKATASUBRAMANIAN of Santa Clara CA (US) for applied materials, inc., Abhijit B. MALLICK of Fremont CA (US) for applied materials, inc.
IPC Code(s): H01L21/02, C23C16/04, C23C16/26, C23C16/458, C23C16/509, C23C16/56, H01J37/32, H01L21/311
CPC Code(s): H01L21/02115
Abstract: the present disclosure provides a method. the method includes positioning a substrate on an electrostatic chuck in a processing volume of a processing chamber. a plasma is generated at the substrate by applying a rf bias to the electrostatic chuck. a first layer of a diamond-like carbon film is deposited in an opening of the substrate by flowing a first deposition gas comprising a hydrocarbon compound into the processing volume. the first layer is etched to remove a portion of the first layer. a second layer of the diamond-like carbon film is deposited in the opening to fill an upper portion of the opening by flowing a second deposition gas into the processing volume.
Inventor(s): Morgan EVANS of Manchester MA (US) for applied materials, inc., John HAUTALA of Beverly MA (US) for applied materials, inc., Charith NANAYAKKARA of Gloucester MA (US) for applied materials, inc.
IPC Code(s): H01L21/02, H01J37/32
CPC Code(s): H01L21/02274
Abstract: an etching and deposition system including a process chamber containing a platen for supporting a substrate, an reactive-ion etching (rie) source adapted to produce an ion beam and to direct the ion beam into the process chamber for etching the substrate, a first plasma enhanced chemical vapor deposition (pecvd) source located on a first side of the rie source, the first pecvd source adapted to produce a first radical beam and to direct the first radical beam into the process chamber for depositing a first material, and a second pecvd source located on a second side of the rie source opposite the first side, the second pecvd source adapted to produce a second radical beam and to direct the second radical beam into the process chamber for depositing a second material.
Inventor(s): Bhaskar Jyoti Bhuyan of Santa Clara CA (US) for applied materials, inc., Mark J. Saly of Morgan Hill CA (US) for applied materials, inc., Lakmal Charidu Kalutarage of San Jose CA (US) for applied materials, inc., Feng Q. Liu of San Jose CA (US) for applied materials, inc., Jeffrey W. Anthis of Redwood City CA (US) for applied materials, inc., Abhijit Basu Mallick of Fremont CA (US) for applied materials, inc., Akhil Singhal of Portland OR (US) for applied materials, inc.
IPC Code(s): H01L21/02, C23C14/00, C23C14/04, C23C14/06, C23C14/10, C23C14/34, C23C14/58
CPC Code(s): H01L21/02274
Abstract: a method includes obtaining a base structure of an electronic device, the base structure including at least one opening, and forming, using a reactive-ion deposition process, a dielectric material within the at least one opening.
20250046610. DOPED DIAMOND-LIKE CARBON_simplified_abstract_(applied materials, inc.)
Inventor(s): Jialiang WANG of Santa Clara CA (US) for applied materials, inc., Guangyan ZHONG of Santa Clara CA (US) for applied materials, inc., Soonil LEE of Santa Clara CA (US) for applied materials, inc., Eswaranand VENKATASUBRAMANIAN of Santa Clara CA (US) for applied materials, inc., Abhijit B. MALLICK of Fremont CA (US) for applied materials, inc.
IPC Code(s): H01L21/033, C23C16/27, C23C16/507, H01L21/3065, H01L21/308, H01L21/311
CPC Code(s): H01L21/0332
Abstract: the present disclosure provides a method of processing a substrate. the method includes flowing a deposition gas comprising a hydrocarbon compound into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck. a plasma is generated at the substrate by applying a first rf bias to the electrostatic chuck to deposit a diamond-like carbon film on the substrate. the diamond-like carbon film is doped with a metal dopant to form a doped diamond-like carbon film. the metal dopant is thermally annealed to the doped diamond-like carbon film.
20250046611. NEUTRAL STRESS DIAMOND-LIKE CARBON_simplified_abstract_(applied materials, inc.)
Inventor(s): Jialiang WANG of Santa Clara CA (US) for applied materials, inc., Soonil LEE of Santa Clara CA (US) for applied materials, inc., Eswaranand VENKATASUBRAMANIAN of Santa Clara CA (US) for applied materials, inc., Abhijit B. MALLICK of Fremont CA (US) for applied materials, inc.
IPC Code(s): H01L21/033, C23C16/26, C23C16/509, H01L21/02, H01L21/311, H01L21/3115
CPC Code(s): H01L21/0332
Abstract: the present disclosure provides method of processing a substrate. the method includes flowing a deposition gas comprising a hydrocarbon compound into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck. a plasma is generated at the substrate by applying a first rf bias to the electrostatic chuck to deposit a diamond-like carbon film on the substrate. the diamond-like carbon film is doped film with a hydrogen dopant to form a doped diamond-like carbon film. the hydrogen dopant is thermally annealing to the doped diamond-like carbon film.
Inventor(s): Ori NOKED of Brookline MA (US) for applied materials, inc.
IPC Code(s): H01L21/683, H01L21/67
CPC Code(s): H01L21/6833
Abstract: a method and a system for determining a temperature of a substrate using a dielectric spectroscopy system. one or more impedance signals are received, where the impedance signals are generated by the substrate and one or more components of the dielectric spectroscopy system in response to one or more measurement signals. at least one first impedance signal is associated with one or more impedance signals generated by the substrate. at least one second impedance signal is associated with one or more impedance signals generated by one or more components of the dielectric spectroscopy system. a temperature of the substrate is determined based on at least one of: at least one first impedance signal, and/or at least one second impedance signal. receiving, associating, and determining are performed during at least one of the following: before, during and after performing at least one process on the substrate.
Inventor(s): Benjamin D. Briggs of Merrimack NH (US) for applied materials, inc., William Charles of Winchester MA (US) for applied materials, inc., Gillian Micale of Boston MA (US) for applied materials, inc.
IPC Code(s): H01L21/768, H01L23/522
CPC Code(s): H01L21/76807
Abstract: a method includes obtaining a base structure including a stack of dielectric layers disposed on a substrate. the stack of dielectric layers includes a first photosensitive dielectric layer including a first photosensitive dielectric material sensitive to a first radiation dose, a second photosensitive dielectric layer including a second photosensitive dielectric material sensitive to a second radiation dose different from the first radiation dose, and a barrier layer disposed between the first photosensitive dielectric layer and the second photosensitive dielectric layer. the method further includes forming a dual damascene structure from the base structure using a dual damascene process.
Inventor(s): Srinivas Gandikota of Santa Clara CA (US) for applied materials, inc., Yogesh Sharma of Sunnyvale CA (US) for applied materials, inc., Tuerxun Ailihumaer of Santa Clara CA (US) for applied materials, inc., Yixiong Yang of Fremont CA (US) for applied materials, inc.
IPC Code(s): H01L29/10, H01L29/66
CPC Code(s): H01L29/1054
Abstract: embodiments of the disclosure provide methods of manufacturing electronic devices that meet compressive stress requirements for pmos transistors and tensile stress requirements for nmos transistors. each p-metal stack and p-metal stack: is formed on a top surface of a channel located between a source and a drain on a semiconductor substrate, and comprises nanosheet channel layers and trenches between each nanosheet channel layer, and has at least one side defining a gate trench. some embodiments include forming a work function layer in the channel and inducing a work function layer strain in the channel. some embodiments include forming a gate metal fill layer on each of the p-metal stack and the n-metal stack and inducing a gate metal fill layer strain in the channel. the gate metal fill layer covers the at least one side of each of the p-metal stack and the n-metal stack and fills the gate trench.
Inventor(s): Jungmin LEE of Santa Clara CA (US) for applied materials, inc., Dieter HAAS of Santa Clara CA (US) for applied materials, inc., Yu-Hsin LIN of Zhubei City (TW) for applied materials, inc., Chung-chia CHEN of Hsinchu City (TW) for applied materials, inc., Ji Young CHOUNG of Hwaseong-si (KR) for applied materials, inc.
IPC Code(s): H10K59/122, H10K59/12
CPC Code(s): H10K59/122
Abstract: embodiments described herein relate to a method of forming a sub-pixel. the method includes depositing a first structure material over a substrate and an anode. the anode is disposed over the substrate. an interlayer dielectric (ild) material is deposited over the first structure material. an ild material is patterned. an intermediate structure material is deposited over the ild material and the first structure material. a second structure material is deposited over the intermediate structure material. a portion of the second structure material is removed to form a second structure. a portion of the intermediate structure material disposed over the ild material is removed to form an intermediate structure. a portion of the first structure material is removed to form a first structure of an overhang structure. the overhang structure comprises the first structure, the second structure, and the intermediate structure.
20250048845. SI-AP OVERHANG DISPLAY_simplified_abstract_(applied materials, inc.)
Inventor(s): Jungmin LEE of Santa Clara CA (US) for applied materials, inc., Dieter HAAS of Santa Clara CA (US) for applied materials, inc., Yu-hsin LIN of Zhubei City (TW) for applied materials, inc., Chung-chia CHEN of Hsinchu City (TW) for applied materials, inc., Ji Young CHOUNG of Hwaseong-si (KR) for applied materials, inc.
IPC Code(s): H10K59/122
CPC Code(s): H10K59/122
Abstract: the present disclosure provides sub-pixels. the sub-pixels include a plurality of pixel structures separating a plurality of anodes. the plurality of pixel structures are disposed over a substrate. a plurality of overhang structures are disposed over the plurality of pixel structures. each overhang structure of the plurality of overhang structures include an upper portion including amorphous silicon disposed over a lower portion including germanium. a bottom surface of the upper portion extends laterally past an upper surface of the lower portion. an organic light emitting diode (oled) material is disposed over an upper surface of the plurality of anodes and an upper surface of the plurality of pixel structures. a cathode is disposed over the oled material and the upper surface of the plurality of pixel structures.
Applied Materials, Inc. patent applications on February 6th, 2025
- Applied Materials, Inc.
- B08B3/04
- B01F23/23
- B01F23/232
- B01F25/452
- B08B13/00
- CPC B08B3/04
- Applied materials, inc.
- B23K26/362
- H01L21/67
- CPC B23K26/362
- B24B37/005
- B24B53/017
- CPC B24B37/005
- C23C16/27
- C23C16/02
- C23C16/511
- C23C16/52
- CPC C23C16/274
- C23C16/455
- G01N21/3504
- CPC C23C16/45557
- G06T7/00
- G01N21/95
- CPC G06T7/0004
- G06T7/194
- CPC G06T7/194
- G06T19/00
- G02B5/04
- G02B6/10
- CPC G06T19/006
- H01J37/32
- CPC H01J37/32183
- B23B35/00
- C23C16/50
- CPC H01J37/3244
- H01L21/02
- B08B7/00
- C23C16/24
- C23C16/30
- C23C16/505
- C23C16/54
- C30B25/02
- H01L21/3213
- H01L21/687
- CPC H01L21/02049
- C23C16/04
- C23C16/26
- C23C16/458
- C23C16/509
- C23C16/56
- H01L21/311
- CPC H01L21/02115
- CPC H01L21/02274
- C23C14/00
- C23C14/04
- C23C14/06
- C23C14/10
- C23C14/34
- C23C14/58
- H01L21/033
- C23C16/507
- H01L21/3065
- H01L21/308
- CPC H01L21/0332
- H01L21/3115
- H01L21/683
- CPC H01L21/6833
- H01L21/768
- H01L23/522
- CPC H01L21/76807
- H01L29/10
- H01L29/66
- CPC H01L29/1054
- H10K59/122
- H10K59/12
- CPC H10K59/122
