METHODS OF FORMING A MEMORY DEVICE

Abstract: a method of forming a microelectronic device comprises forming a microelectronic device structure comprising a base structure, a doped semiconductive material overlying the base structure, a stack structure overlying the doped semiconductive material, cell pillar structures vertically extending through the stack structure and the doped semiconductive material and into the base structure, and digit line structures vertically overlying the stack structure. an additional microelectronic device structure comprising control logic devices is formed. the microelectronic device structure is attached to the additional microelectronic device structure to form a microelectronic device structure assembly. the base structure and portions of the cell pillar structures vertically extending into the base structure are removed to expose the doped semiconductive material. the doped semiconductive material is then patterned to form at least one source structure over the stack structure and coupled to the cell pillar structures. microelectronic devices and electronic systems are also described.

Inventor(s): Kunal R. Parekh

CPC Classification: H01L23/5226 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (use of semiconductor devices for measuring ; resistors in general ; magnets, inductors or transformers ; capacitors in general ; electrolytic devices ; batteries or accumulators ; waveguides, resonators or lines of the waveguide type ; line connectors or current collectors ; stimulated-emission devices ; electromechanical resonators ; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers ; electric light sources in general ; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components ; use of semiconductor devices in circuits having a particular application, see the subclass for the application))

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