19009060. Integrated Assemblies and Methods of Forming Integrated Assemblies (Micron Technology, Inc.)
Integrated Assemblies and Methods of Forming Integrated Assemblies
Organization Name
Inventor(s)
Justin B. Dorhout of Boise ID US
Kunal R. Parekh of Boise ID US
Martin C. Roberts of Boise ID US
Mohd Kamran Akhtar of Boise ID US
Integrated Assemblies and Methods of Forming Integrated Assemblies
This abstract first appeared for US patent application 19009060 titled 'Integrated Assemblies and Methods of Forming Integrated Assemblies
Original Abstract Submitted
Some embodiments include an integrated assembly with a semiconductor channel material having a boundary region where a more-heavily-doped region interfaces with a less-heavily-doped region. The more-heavily-doped region and the less-heavily-doped region have the same majority carriers. The integrated assembly includes a gating structure adjacent the semiconductor channel material and having a gating region and an interconnecting region of a common and continuous material. The gating region has a length extending along a segment of the more-heavily-doped region, a segment of the less-heavily-doped region, and the boundary region. The interconnecting region extends laterally outward from the gating region on a side opposite the semiconductor channel region, and is narrower than the length of the gating region. Some embodiments include methods of forming integrated assemblies.
- Micron Technology, Inc.
- Justin B. Dorhout of Boise ID US
- Kunal R. Parekh of Boise ID US
- Martin C. Roberts of Boise ID US
- Mohd Kamran Akhtar of Boise ID US
- Chet E. Carter of Boise ID US
- David Daycock of Boise ID US
- H10B41/35
- H01L21/033
- H01L21/308
- H01L21/311
- H01L21/3215
- H01L21/67
- H01L21/768
- H10B20/00
- H10B41/20
- H10B41/23
- H10B41/27
- H10B43/27
- H10B43/35
- CPC H10B41/35
