METAL OXIDE COMPOSITE AS ETCH STOP LAYER

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Kai-Feng Cheng of Taoyuan City TW

Chi-Lin Teng of Taichung City TW

Hai-Ching Chen of Hsinchu City TW

Hsin-Yen Huang of New Taipei City TW

METAL OXIDE COMPOSITE AS ETCH STOP LAYER

This abstract first appeared for US patent application 18990711 titled 'METAL OXIDE COMPOSITE AS ETCH STOP LAYER

Original Abstract Submitted

A semiconductor device includes a substrate, a first conductive feature disposed in a top portion of the substrate, an etch stop layer formed of a metal oxide composite and disposed on a top surface of the substrate, and a second conductive feature disposed on and through the etch stop layer and in contact with the first conductive feature. The metal oxide composite contains a metal element represented by M, and a top surface of the etch stop layer includes an M—O—X group, O representing oxygen, and X representing an element other than hydrogen.