18966391. Integrated Structures (Micron Technology, Inc.)
Integrated Structures
Organization Name
Inventor(s)
Justin B. Dorhout of Boise ID US
Kunal R. Parekh of Boise ID US
Martin C. Roberts of Boise ID US
Integrated Structures
This abstract first appeared for US patent application 18966391 titled 'Integrated Structures
Original Abstract Submitted
Some embodiments include an integrated structure having a conductive material, a select device gate material over the conductive material, and vertically-stacked conductive levels over the select device gate material. Vertically-extending monolithic channel material is adjacent the select device gate material and the conductive levels. The monolithic channel material contains a lower segment adjacent the select device gate material and an upper segment adjacent the conductive levels. A first vertically-extending region is between the lower segment of the monolithic channel material and the select device gate material. The first vertically-extending region contains a first material. A second vertically-extending region is between the upper segment of the monolithic channel material and the conductive levels. The second vertically-extending region contains a material which is different in composition from the first material.
