18814425. HIGH ACCURACY PARASITICS EXTRACTION (D2S, Inc.)
HIGH ACCURACY PARASITICS EXTRACTION
Organization Name
Inventor(s)
Donald Oriordan of Sunnyvale CA (US)
Akira Fujimura of Saratoga CA (US)
HIGH ACCURACY PARASITICS EXTRACTION
This abstract first appeared for US patent application 18814425 titled 'HIGH ACCURACY PARASITICS EXTRACTION
Original Abstract Submitted
Some embodiments provide a method for performing parasitic extraction. The method identifies first and second conductive circuit components on a layer of a design layout for an integrated circuit (IC). The first and second conductive circuit components (i) traverse within a plane defined for the layer and (ii) have a thickness orthogonal to the plane. The method identifies, for each conductive circuit component, a predicted manufactured three-dimensional (3-D) shape of the conductive circuit component. At least one of the identified shapes tapers in the direction orthogonal to the plane. The method uses the identified 3-D shapes of the first and second conductive circuit components to compute a parasitic effect of the second conductive component on the first conductive component.