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18478932. FINE-GRAIN INTEGRATION OF GROUP III-V DEVICES (INTEL CORPORATION)

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FINE-GRAIN INTEGRATION OF GROUP III-V DEVICES

Organization Name

INTEL CORPORATION

Inventor(s)

Han Wui Then of Portland OR US

Adel Elsherbini of Chandler AZ US

Feras Eid of Chandler AZ US

Thomas L. Sounart of Chandler AZ US

Georgios C. Dogiamis of Chandler AZ US

Tushar Kanti Talukdar of Wilsonville OR US

FINE-GRAIN INTEGRATION OF GROUP III-V DEVICES

This abstract first appeared for US patent application 18478932 titled 'FINE-GRAIN INTEGRATION OF GROUP III-V DEVICES

Original Abstract Submitted

Methods of selectively transferring integrated circuit (IC) components between substrates, and devices and systems formed using the same, are disclosed herein. In one embodiment, a first substrate with a release layer and a layer of IC components over the release layer is received, and a second substrate with one or more adhesive areas is received. The layer of IC components may include one or more transistors that contain one or more group III-V materials. The first substrate is partially bonded to the second substrate, such that a subset of IC components on the first substrate are bonded to the adhesive areas on the second substrate. The first substrate is then separated from the second substrate, and the subset of IC components bonded to the second substrate are separated from the first substrate and remain on the second substrate.

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