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Category:Willy Rachmady of Beaverton OR (US)
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Pages in category "Willy Rachmady of Beaverton OR (US)"
The following 8 pages are in this category, out of 8 total.
1
- 17838637. DUAL METAL SILICIDE FOR STACKED TRANSISTOR DEVICES simplified abstract (Intel Corporation)
- 17838646. SOURCE AND DRAIN CONTACTS FORMED USING SACRIFICIAL REGIONS OF SOURCE AND DRAIN simplified abstract (Intel Corporation)
- 17851658. SELF-ALIGNED EMBEDDED SOURCE AND DRAIN CONTACTS simplified abstract (Intel Corporation)
- 18395192. TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR AND METHODS OF FABRICATION simplified abstract (Intel Corporation)
- 18514995. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING INSULATOR FIN ON INSULATOR SUBSTRATE simplified abstract (Intel Corporation)
- 18540544. TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN simplified abstract (Intel Corporation)
