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Category:H01G4/33
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Pages in category "H01G4/33"
The following 9 pages are in this category, out of 9 total.
1
- 17564699. CAPACITOR, ELECTRONIC DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17835854. HIGH DENSITY METAL LAYERS IN ELECTRODE STACKS FOR TRANSITION METAL OXIDE DIELECTRIC CAPACITORS simplified abstract (Intel Corporation)
- 17948586. THIN FILM CAPACITORS simplified abstract (Intel Corporation)
- 18312827. CAPACITOR, ELECTRONIC DEVICE INCLUDING THE SAME, AND METHOD OF PREPARING THE CAPACITOR simplified abstract (Samsung Electronics Co., Ltd.)
B
U
- US Patent Application 18065188. A METHOD FOR MANUFACTURING AN ELECTRICAL DEVICE WITH AN ANODIC POROUS OXIDE REGION DELIMITED BY PLANARIZING A STACK OF MATERIALS simplified abstract
- US Patent Application 18231754. HIGH DENSITY METAL INSULATOR METAL CAPACITOR simplified abstract
- US Patent Application 18363217. FERROELECTRIC MFM CAPACITOR ARRAY AND METHODS OF MAKING THE SAME simplified abstract
