17835854. HIGH DENSITY METAL LAYERS IN ELECTRODE STACKS FOR TRANSITION METAL OXIDE DIELECTRIC CAPACITORS simplified abstract (Intel Corporation)
Contents
HIGH DENSITY METAL LAYERS IN ELECTRODE STACKS FOR TRANSITION METAL OXIDE DIELECTRIC CAPACITORS
Organization Name
Inventor(s)
Thomas Sounart of Chandler AZ (US)
Neelam Prabhu Gaunkar of Chandler AZ (US)
Tristan Tronic of Aloha OR (US)
HIGH DENSITY METAL LAYERS IN ELECTRODE STACKS FOR TRANSITION METAL OXIDE DIELECTRIC CAPACITORS - A simplified explanation of the abstract
This abstract first appeared for US patent application 17835854 titled 'HIGH DENSITY METAL LAYERS IN ELECTRODE STACKS FOR TRANSITION METAL OXIDE DIELECTRIC CAPACITORS
Simplified Explanation
The patent application describes capacitors used for various purposes in electronic systems, such as decoupling and power delivery in integrated circuits. The capacitors consist of a transition metal oxide dielectric sandwiched between two electrodes. One of the electrodes includes a conductive metal oxide layer on the transition metal oxide dielectric, and a high density metal layer on top of the conductive metal oxide.
- The patent application discloses capacitors for decoupling, power delivery, integrated circuits, and related systems.
- The capacitors utilize a transition metal oxide dielectric between two electrodes.
- One of the electrodes includes a conductive metal oxide layer on top of the transition metal oxide dielectric.
- A high density metal layer is added on top of the conductive metal oxide layer.
- The invention provides improved performance and reliability for capacitors used in electronic systems.
Potential Applications
The technology described in the patent application has potential applications in various electronic systems and devices, including:
- Integrated circuits
- Power delivery systems
- Decoupling capacitors
- Electronic devices requiring high-performance capacitors
Problems Solved
The technology addresses several problems associated with capacitors used in electronic systems, including:
- Inefficient power delivery and decoupling in integrated circuits
- Limited performance and reliability of capacitors
- Challenges in fabricating high-density capacitors
Benefits
The technology offers several benefits for electronic systems and devices:
- Improved power delivery and decoupling performance in integrated circuits
- Enhanced reliability and durability of capacitors
- Simplified fabrication process for high-density capacitors
Original Abstract Submitted
Capacitors for decoupling, power delivery, integrated circuits, related systems, and methods of fabrication are disclosed. Such capacitors include a transition metal oxide dielectric between two electrodes, at least one of which includes a conductive metal oxide layer on the transition metal oxide dielectric and a high density metal layer on the conductive metal oxide.
