US Patent Application 18231754. HIGH DENSITY METAL INSULATOR METAL CAPACITOR simplified abstract

HIGH DENSITY METAL INSULATOR METAL CAPACITOR

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Wei Kai Shih of Nantou County (TW)

Kuo-Liang Wang of Hsinchu City (TW)

HIGH DENSITY METAL INSULATOR METAL CAPACITOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 18231754 titled 'HIGH DENSITY METAL INSULATOR METAL CAPACITOR

Simplified Explanation

The patent application describes semiconductor devices and methods.

• The semiconductor device includes an insulation layer, a first electrode, a second electrode, and an insulator.
• The first electrode and second electrode have sidewalls and a bottom surface in contact with the insulation layer.
• The insulator is formed between the first electrode and the second electrode.
• The insulator is coupled to a sidewall of the first electrode and a sidewall of the second electrode.

Original Abstract Submitted

Semiconductor devices and methods are disclosed herein. In one example, a disclosed semiconductor device includes: an insulation layer, a first electrode with sidewalls and a bottom surface in contact with the insulation layer; a second electrode with sidewalls and a bottom surface in contact with the insulation layer; and an insulator formed between the first electrode and the second electrode. The insulator is coupled to a sidewall of the first electrode and coupled to a sidewall of the second electrode.