17961025. MEMORY ARRAY STRUCTURES AND METHODS OF THEIR FABRICATION simplified abstract (Micron Technology, Inc.)
MEMORY ARRAY STRUCTURES AND METHODS OF THEIR FABRICATION
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Inventor(s)
MEMORY ARRAY STRUCTURES AND METHODS OF THEIR FABRICATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 17961025 titled 'MEMORY ARRAY STRUCTURES AND METHODS OF THEIR FABRICATION
Simplified Explanation
- Memory array structures consist of multiple memory cells connected to data lines. - A first data line is connected to a first group of memory cells, while a second data line is connected to a second group of memory cells. - A solid dielectric material separates portions of the first and second data lines. - A second dielectric material contains a void between other portions of the first and second data lines. - A top contact is in contact with a portion of the first data line.
Potential Applications
This technology could be used in: - Computer memory systems - Solid-state drives - Embedded systems
Problems Solved
- Efficient data storage and retrieval - Improved memory array organization - Enhanced data transfer speeds
Benefits
- Increased memory capacity - Faster data access - Enhanced overall system performance
Original Abstract Submitted
Memory array structures might include a first data line selectively connected to a first plurality of memory cells, a second data line selectively connected to a second plurality of memory cells, a solid first dielectric extending between a first portion of the first data line and a first portion of the second data line, a second dielectric containing a void extending between a second portion of the first data line and a second portion of the second data line, and a top contact overlying and in contact with the first portion of the first data line.
