17936760. FIN FIELD EFFECT TRANSISTOR SENSE AMPLIFIER CIRCUITRY AND RELATED APPARATUSES AND COMPUTING SYSTEMS simplified abstract (Micron Technology, Inc.)

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FIN FIELD EFFECT TRANSISTOR SENSE AMPLIFIER CIRCUITRY AND RELATED APPARATUSES AND COMPUTING SYSTEMS

Organization Name

Micron Technology, Inc.

Inventor(s)

Yuan He of Boise ID (US)

Fatma Arzum Simsek-ege of Boise ID (US)

FIN FIELD EFFECT TRANSISTOR SENSE AMPLIFIER CIRCUITRY AND RELATED APPARATUSES AND COMPUTING SYSTEMS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17936760 titled 'FIN FIELD EFFECT TRANSISTOR SENSE AMPLIFIER CIRCUITRY AND RELATED APPARATUSES AND COMPUTING SYSTEMS

Simplified Explanation

The patent application describes a Fin field effect transistor (FinFET) sense amplifier circuitry and related apparatuses for computing systems. The apparatus includes pull-up and pull-down sense amplifiers, column select gates, global input-output (GIO) lines, and GIO pre-charge circuitry. The pull-up sense amplifier consists of P-type FinFETs with a first threshold voltage potential, while the pull-down sense amplifier consists of N-type FinFETs with a second threshold voltage potential that is substantially equal to the first. The GIO lines are connected to the sense amplifiers through column select gates, and the GIO pre-charge circuitry pre-charges the GIO lines to a low power supply voltage potential.

  • Pull-up sense amplifier with P-type FinFETs
  • Pull-down sense amplifier with N-type FinFETs
  • GIO lines connected to sense amplifiers through column select gates
  • GIO pre-charge circuitry pre-charges GIO lines to low power supply voltage

Potential Applications

The technology can be applied in high-performance computing systems, data centers, and other applications requiring efficient sense amplifier circuitry.

Problems Solved

The technology addresses the need for improved sense amplifier circuitry in computing systems, providing faster and more reliable operation.

Benefits

  • Faster operation
  • Improved reliability
  • Efficient use of power

Potential Commercial Applications

"Efficient FinFET Sense Amplifier Circuitry for High-Performance Computing Systems"

Possible Prior Art

There may be prior art related to sense amplifier circuitry in computing systems, but specific examples are not provided in the patent application.

Unanswered Questions

How does the technology impact overall system performance?

The article does not delve into the overall impact of the technology on system performance, such as speed improvements or energy efficiency gains.

Are there any limitations to the technology in terms of scalability?

The article does not address any potential limitations of the technology in terms of scalability to different system sizes or configurations.


Original Abstract Submitted

Fin field effect transistor (FinFET) sense amplifier circuitry and related apparatuses and computing systems are disclosed. An apparatus includes a pull-up sense amplifier, a pull-down sense amplifier, column select gates, global input-output (GIO) lines, and GIO pre-charge circuitry. The pull-up sense amplifier includes P-type FinFETs having a first threshold voltage potential associated therewith. The pull-down sense amplifier includes N-type FinFETs having a second threshold voltage potential associated therewith. The second threshold voltage potential is substantially equal to the first threshold voltage potential. The GIO lines are electrically connected to the pull-up sense amplifier and the pull-down sense amplifier through the column select gates. The GIO pre-charge circuitry is configured to pre-charge the GIO lines to a low power supply voltage potential.