There is currently no text in this page. You can search for this page title in other pages, or search the related logs, but you do not have permission to create this page.
Category:Willy Rachmady of Beaverton OR (US)
Jump to navigation
Jump to search
Pages in category "Willy Rachmady of Beaverton OR (US)"
The following 10 pages are in this category, out of 10 total.
1
- 17838637. DUAL METAL SILICIDE FOR STACKED TRANSISTOR DEVICES simplified abstract (Intel Corporation)
- 17838646. SOURCE AND DRAIN CONTACTS FORMED USING SACRIFICIAL REGIONS OF SOURCE AND DRAIN simplified abstract (Intel Corporation)
- 17851658. SELF-ALIGNED EMBEDDED SOURCE AND DRAIN CONTACTS simplified abstract (Intel Corporation)
- 18395192. TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR AND METHODS OF FABRICATION simplified abstract (Intel Corporation)
- 18419015. SIDEWAYS VIAS IN ISOLATION AREAS TO CONTACT INTERIOR LAYERS IN STACKED DEVICES simplified abstract (Intel Corporation)
- 18514995. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING INSULATOR FIN ON INSULATOR SUBSTRATE simplified abstract (Intel Corporation)
- 18540544. TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN simplified abstract (Intel Corporation)
I
- Intel corporation (20240113161). TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN simplified abstract
- Intel corporation (20240136277). TOP GATE RECESSED CHANNEL CMOS THIN FILM TRANSISTOR AND METHODS OF FABRICATION simplified abstract
- Intel corporation (20240162141). SIDEWAYS VIAS IN ISOLATION AREAS TO CONTACT INTERIOR LAYERS IN STACKED DEVICES simplified abstract