SEARCH RESULTS for assignor:"LAI, WEI-HAN"

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(X0) 15694222: Negative Tone Developer For Extreme Ultraviolet Lithography

(A1) 20180341177: Negative Tone Developer For Extreme Ultraviolet Lithography

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(X0) 16055340: Extreme Ultraviolet Photoresist and Method

(A1) 20180341175: Extreme Ultraviolet Photoresist and Method

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(X0) 15480976: METHOD FOR FORMING SEMICONDUCTOR STRUCTURE USING MODIFIED RESIST LAYER

(A1) 20180292752: METHOD FOR FORMING SEMICONDUCTOR STRUCTURE USING MODIFIED RESIST LAYER

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(X0) 14334612: PHOTORESIST AND METHOD

(A1) 20150160552: PHOTORESIST AND METHOD

(B2) 1: PHOTORESIST AND METHOD

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(X0) 15071243: METHOD OF PRIMING PHOTORESIST BEFORE APPLICATION OF A SHRINK MATERIAL IN A LITHOGRAPHY PROCESS

(A1) 20170271155: METHOD OF PRIMING PHOTORESIST BEFORE APPLICATION OF A SHRINK MATERIAL IN A LITHOGRAPHY PROCESS

(B2) 1: METHOD OF PRIMING PHOTORESIST BEFORE APPLICATION OF A SHRINK MATERIAL IN A LITHOGRAPHY PROCESS

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(X0) 15412856: Extreme Ultraviolet Photoresist and Method

(A1) 20180149971: Extreme Ultraviolet Photoresist and Method

(B2) 1: Extreme Ultraviolet Photoresist and Method

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(X0) 15380911: MATERIAL COMPOSITION AND PROCESS FOR SUBSTRATE MODIFICATION

(A1) 20180174837: MATERIAL COMPOSITION AND PROCESS FOR SUBSTRATE MODIFICATION

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(X0) 15614032: Extreme Ultraviolet Photoresist With High-Efficiency Electron Transfer

(A1) 20180173101: Extreme Ultraviolet Photoresist With High-Efficiency Electron Transfer

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(X0) 14876879: NOVEL PHOTORESIST ADDITIVE FOR OUTGASSING REDUCTION AND OUT-OF-BAND RADIATION ABSORPTION

(A1) 20160238934: NOVEL PHOTORESIST ADDITIVE FOR OUTGASSING REDUCTION AND OUT-OF-BAND RADIATION ABSORPTION

(B2) 9: NOVEL PHOTORESIST ADDITIVE FOR OUTGASSING REDUCTION AND OUT-OF-BAND RADIATION ABSORPTION

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(X0) 14504959: FUNCTIONAL HEADWEAR

(A1) 20150092972: FUNCTIONAL HEADWEAR

(B2) 9: FUNCTIONAL HEADWEAR

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(X0) 15040173: EXTREME ULTRAVIOLET PHOTORESIST

(A1) 20170227851: EXTREME ULTRAVIOLET PHOTORESIST

(B2) 9: EXTREME ULTRAVIOLET PHOTORESIST