US Patent Application 18449830. SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Toshinari Sasaki of Tokyo (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18449830 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device with specific features. Here are the key points:
- The device includes an oxide semiconductor layer with a first and second surface.
- A gate electrode is positioned facing the oxide semiconductor layer.
- A gate insulating layer is present between the oxide semiconductor layer and the gate electrode.
- The oxide semiconductor layer has a pair of first electrodes in contact with its first surface.
- Within a depth range of 2 nanometers from the first surface, there is a region near the edge of at least one of the first electrodes where the composition ratio of nitrogen is 2 percent or more.
Original Abstract Submitted
A semiconductor device including: an oxide semiconductor layer including a first surface and a second surface opposite to the first surface; a gate electrode facing the oxide semiconductor layer; a gate insulating layer between the oxide semiconductor layer and the gate electrode; and a pair of first electrode being in contact with the first surface of the oxide semiconductor layer, respectively, wherein the oxide semiconductor layer including a region in which composition ratio of nitrogen is 2 percent or more within a depth range of 2 nanometers from the first surface in a region vicinity of an edge of at least one of the first electrode of the pair of first electrode.
