US Patent Application 18449830. SEMICONDUCTOR DEVICE simplified abstract

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SEMICONDUCTOR DEVICE

Organization Name

Japan Display Inc.

Inventor(s)

Takaya Tamaru of Tokyo (JP)

Masashi Tsubuku of Tokyo (JP)

Toshinari Sasaki of Tokyo (JP)

Hajime Watakabe of Tokyo (JP)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18449830 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The patent application describes a semiconductor device with specific features. Here are the key points:

  • The device includes an oxide semiconductor layer with a first and second surface.
  • A gate electrode is positioned facing the oxide semiconductor layer.
  • A gate insulating layer is present between the oxide semiconductor layer and the gate electrode.
  • The oxide semiconductor layer has a pair of first electrodes in contact with its first surface.
  • Within a depth range of 2 nanometers from the first surface, there is a region near the edge of at least one of the first electrodes where the composition ratio of nitrogen is 2 percent or more.


Original Abstract Submitted

A semiconductor device including: an oxide semiconductor layer including a first surface and a second surface opposite to the first surface; a gate electrode facing the oxide semiconductor layer; a gate insulating layer between the oxide semiconductor layer and the gate electrode; and a pair of first electrode being in contact with the first surface of the oxide semiconductor layer, respectively, wherein the oxide semiconductor layer including a region in which composition ratio of nitrogen is 2 percent or more within a depth range of 2 nanometers from the first surface in a region vicinity of an edge of at least one of the first electrode of the pair of first electrode.