US Patent Application 18447557. SEMICONDUCTOR TOOL FOR COPPER DEPOSITION simplified abstract

SEMICONDUCTOR TOOL FOR COPPER DEPOSITION

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Chia-Hung Tsai of Hsinchu County (TW)]]

[[Category:Chin-Szu Lee of Taoyuan City (TW)]]

[[Category:Szu-Hua Wu of Zhubei City (TW)]]

[[Category:Jui-Hung Ho of Hsinchu City (TW)]]

[[Category:Chi-Hung Liao of Hsinchu City (TW)]]

[[Category:Yu-Jen Chien of Hsinchu (TW)]]

SEMICONDUCTOR TOOL FOR COPPER DEPOSITION - A simplified explanation of the abstract

This abstract first appeared for US patent application 18447557 titled 'SEMICONDUCTOR TOOL FOR COPPER DEPOSITION

Simplified Explanation

The patent application describes a magnetic shield that reduces external noise in a chamber used for copper physical vapor deposition (PVD).

• The shield has a thickness between 0.1 mm and 10 mm to protect against radio frequency and other electromagnetic signals.
• This reduces the re-direction of copper atoms in the chamber caused by external noise.
• Even in the event of hardware failure during PVD, the copper atoms are less affected by small re-directions from external noise.
• This results in the formation of more uniform back end of line (BEOL) and middle end of line (MEOL) conductive structures.
• The increased uniformity improves conductivity and extends the lifetime of electronic devices that include these conductive structures.

Original Abstract Submitted

A magnetic shield reduces external noise in a chamber including a target and at least one electromagnet for copper physical vapor deposition (PVD). The shield may have a thickness in a range from approximately 0.1 mm to approximately 10 mm to provide sufficient protection from radio frequency and other electromagnetic signals. As a result, copper atoms in the chamber undergo less re-direction from external noise. Additionally, even when hardware failure occurs during PVD (e.g., an electromagnet malfunctions, a wafer stage is not level, and/or a flow optimizer induces too much shift, among other examples), the copper atoms are less susceptible to small re-directions from external noise. As a result, back end of line (BEOL) and/or middle end of line (MEOL) conductive structures are formed in a more uniform manner, which increases conductivity and improves lifetime of an electronic device including the BEOL and/or MEOL conductive structures.