US Patent Application 18447493. Apparatus and Method for Use with a Substrate Chamber simplified abstract
Contents
Apparatus and Method for Use with a Substrate Chamber
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Apparatus and Method for Use with a Substrate Chamber - A simplified explanation of the abstract
This abstract first appeared for US patent application 18447493 titled 'Apparatus and Method for Use with a Substrate Chamber
Simplified Explanation
The patent application describes an apparatus for monitoring and controlling the growth of a wafer in an epitaxial growth chamber.
- The apparatus includes multiple pyrometers placed at different points on the front and backside of the wafer to monitor thermal radiation.
- A first controller adjusts the output of heating sources in different regions of the chamber based on the monitored thermal radiation from the backside of the wafer.
- A second controller adjusts the flow rate of precursors injected into the chamber based on the monitored thermal radiation from both the front and backside of the wafer.
- The apparatus allows for precise control of the growth process, ensuring optimal conditions for the wafer's epitaxial growth.
Original Abstract Submitted
In an embodiment, an apparatus includes a first pyrometer and a second pyrometer configured to monitor thermal radiation from a first point and a second point on a backside of a wafer, respectively, a first heating source in a first region and a second heating source in a second region of an epitaxial growth chamber, respectively, where a first controller adjusts an output of the first heating source and the second heating source based upon the monitored thermal radiation from the first point and the second point, respectively, a third pyrometer and a fourth pyrometer configured to monitor thermal radiation from a third point and a fourth point on a frontside of the wafer, respectively, where a second controller adjusts a flow rate of one or more precursors injected into the epitaxial growth chamber based upon the monitored thermal radiation from the first, second, third, and fourth points.
