US Patent Application 18447470. SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18447470 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device with multiple layers and regions.
- The device includes a first conductive layer, a first insulating layer, an oxide semiconductor layer, and second and third conductive layers.
- The oxide semiconductor layer has different regions, including a first region, a second region, and a third region.
- There are also two impurity regions, one between the first and second regions and the other between the first and third regions.
- The first impurity region is in contact with the second conductive layer, and the second impurity region is in contact with the third conductive layer.
- The electrical conductivity of the impurity regions is higher than that of the other regions.
Original Abstract Submitted
A semiconductor device includes a first conductive layer, a first insulating layer on the first conductive layer, an oxide semiconductor layer on the first insulating layer, and second and third conductive layers on the oxide semiconductive layer. The oxide semiconductor layer includes a first region, a second region in contact with the second conductive layer, a third region in contact with the third conductive layer, a first impurity region between the first region and the second region, and a second impurity region between the first region and the third region. The first impurity region is in contact with the second conductive layer. The second impurity region is in contact with the third conductive layer. An electrical conductivity of each of the first impurity region and the second impurity region is greater than an electrical conductivity of each of the second region and the third region.
