US Patent Application 18447460. STACKED SEMICONDUCTOR DEVICES AND METHODS OF FORMING SAME simplified abstract

STACKED SEMICONDUCTOR DEVICES AND METHODS OF FORMING SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Hsien-Wei Chen of Hsinchu (TW)

Der-Chyang Yeh of Hsinchu (TW)

Li-Hsien Huang of Zhubei City (TW)

STACKED SEMICONDUCTOR DEVICES AND METHODS OF FORMING SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18447460 titled 'STACKED SEMICONDUCTOR DEVICES AND METHODS OF FORMING SAME

Simplified Explanation

The patent application describes a method for forming stacked semiconductor devices.

• Contact pads are formed on a die.
• A passivation layer is deposited over the contact pads.
• The passivation layer is patterned to expose the contact pads.
• A buffer layer is deposited over the passivation layer and contact pads.
• The buffer layer is patterned to expose a set of contact pads.
• First conductive pillars are formed in the exposed contact pads.
• Conductive lines are formed over the buffer layer and terminate with the first conductive pillars.
• An external connector structure is formed over the first conductive pillars and conductive lines.
• The first conductive pillars connect the contact pads to the external connector structure.

Original Abstract Submitted

Stacked semiconductor devices and methods of forming the same are provided. Contact pads are formed on a die. A passivation layer is blanket deposited over the contact pads. The passivation layer is subsequently patterned to form first openings, the first openings exposing the contact pads. A buffer layer is blanket deposited over the passivation layer and the contact pads. The buffer layer is subsequently patterned to form second openings, the second opening exposing a first set of the contact pads. First conductive pillars are formed in the second openings. Conductive lines are formed over the buffer layer simultaneously with the first conductive pillars, ends of the conductive lines terminating with the first conductive pillars. An external connector structure is formed over the first conductive pillars and the conductive lines, the first conductive pillars electrically coupling the contact pads to the external connector structure.