US Patent Application 18447400. SEMICONDUCTOR DEVICE simplified abstract
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18447400 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device with multiple layers and components.
- The device includes a first oxide semiconductor layer and a first gate electrode, which are separated by a first gate insulating layer.
- A first insulating layer covers the first oxide semiconductor layer and has an opening.
- A first conductive layer is located above the first insulating layer and within the opening, and it is electrically connected to the first oxide semiconductor layer.
- An oxide layer is present between the upper surface of the first insulating layer and the first conductive layer.
- The first insulating layer is exposed from the oxide layer in a specific region that does not overlap with the first conductive layer in a plan view.
Original Abstract Submitted
A semiconductor device including a first oxide semiconductor layer, a first gate electrode opposing the first oxide semiconductor layer, a first gate insulating layer between the first oxide semiconductor layer and the first gate electrode, a first insulating layer covering the first oxide semiconductor layer and having a first opening, a first conductive layer above the first insulating layer and in the first opening, the first conductive layer being electrically connected to the first oxide semiconductor layer, and an oxide layer between an upper surface of the first insulating layer and the first conductive layer, wherein the first insulating layer is exposed from the oxide layer in a region not overlapping the first conductive layer in a plan view.
