US Patent Application 18447212. SEMICONDUCTOR DEVICE AND METHOD simplified abstract
Contents
SEMICONDUCTOR DEVICE AND METHOD
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Po-Chuan Wang of Taipei City (TW)
Chia-Yang Hung of Kaohsiung City (TW)
Sheng-Liang Pan of Hsinchu (TW)
SEMICONDUCTOR DEVICE AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18447212 titled 'SEMICONDUCTOR DEVICE AND METHOD
Simplified Explanation
The patent application describes a semiconductor device and manufacturing method that use a remote plasma process to minimize material segregation, resulting in a smoother interface for depositing conductive material. This reduces losses and improves overall yield.
- Semiconductor device and manufacturing method using a remote plasma process
- Aims to reduce or eliminate material segregation
- Material segregation can cause uneven interfaces for depositing conductive material
- Smoother interfaces allow for better deposition of conductive material
- Improved deposition reduces losses and improves overall yield
Original Abstract Submitted
A semiconductor device and method of manufacture are provided which utilize a remote plasma process which reduces or eliminates segregation of material. By reducing segregation of the material, overlying conductive material can be deposited on a smoother interface. By depositing on smoother interfaces, overall losses of the deposited material may be avoided, which improves the overall yield.
