US Patent Application 18446874. DISPLAY DEVICE simplified abstract

DISPLAY DEVICE

Organization Name

Samsung Display Co., LTD.==Inventor(s)==

[[Category:Yoon-Jong Cho of Seongnam-si (KR)]]

[[Category:Seok Je Seong of Seongnam-si (KR)]]

[[Category:Seong Jun Lee of Seoul (KR)]]

DISPLAY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18446874 titled 'DISPLAY DEVICE

Simplified Explanation

The patent application describes a display device that includes a polycrystalline semiconductor with a driving transistor and electrodes. It also includes a first transistor and a second transistor with light blocking layers and oxide semiconductors.

• The display device includes a polycrystalline semiconductor with a driving transistor and electrodes.
• A gate electrode of the driving transistor is located on the channel of the driving transistor.
• A first storage electrode is located on the gate electrode of the driving transistor.
• The first transistor and the second transistor both have light blocking layers.
• The oxide semiconductor includes channels and electrodes for both the first and second transistors.
• The gate electrode of the first transistor is located on the channel of the first transistor.
• The gate electrode of the second transistor is located on the channel of the second transistor.
• The light blocking layer of the first transistor and the first storage electrode are on the same layer.
• The light blocking layer of the second transistor and the gate electrode of the driving transistor are on the same layer.

Original Abstract Submitted

A display device includes a polycrystalline semiconductor including a channel and electrodes of a driving transistor; a gate electrode of the driving transistor on the channel of the driving transistor; a first storage electrode on the gate electrode of the driving transistor; a light blocking layer of a first transistor and a light blocking layer of a second transistor; an oxide semiconductor including a channel and electrodes of the first transistor, and a channel and electrodes of the second transistor; a gate electrode of the first transistor on the channel of the first transistor; and a gate electrode of the second transistor on the channel of the second transistor. The light blocking layer of the first transistor and the first storage electrode are on a same layer, and the light blocking layer of the second transistor and the gate electrode of the driving transistor are on a same layer.