US Patent Application 18446873. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Chung-Ting Lu of Kaohsiung City (TW)]]

[[Category:Chih-Chiang Chang of Taipei City (TW)]]

[[Category:Chung-Chieh Yang of Zhubei City (TW)]]

[[Category:Yung-Chow Peng of Hsinchu City (TW)]]

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18446873 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Simplified Explanation

The patent application describes a semiconductor device with an active region and conductive structures.

• The device has an active region that extends along a first lateral direction.
• There are first conductive structures that are connected to the active region and extend along a second lateral direction.
• Second conductive structures are placed above the first conductive structures and extend along the first lateral direction.
• The device also includes a first capacitor with a first electrode and a second electrode.
• The first electrode is made up of one of the first conductive structures and the active region.
• The second electrode is made up of one of the second conductive structures.
• Both the active region and the first conductive structures are connected to a power rail structure that carries a supply voltage.

Original Abstract Submitted

A semiconductor device includes an active region over a substrate extending along a first lateral direction. The semiconductor device includes a number of first conductive structures operatively coupled to the active region. The first conductive structures extend along a second lateral direction. The semiconductor device includes a number of second conductive structures disposed above the plurality of first conductive structures. The second conductive structures extend along the first lateral direction. The semiconductor device includes a first capacitor having a first electrode and a second electrode. The first electrode includes one of the first conductive structures and the active region, and the second electrode includes a first one of the second conductive structures. Each of the active region and the first conductive structures is electrically coupled to a power rail structure configured to carry a supply voltage.