US Patent Application 18446873. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract

From WikiPatents
Jump to navigation Jump to search

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Chung-Ting Lu of Kaohsiung City (TW)]]

[[Category:Chih-Chiang Chang of Taipei City (TW)]]

[[Category:Chung-Chieh Yang of Zhubei City (TW)]]

[[Category:Yung-Chow Peng of Hsinchu City (TW)]]

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18446873 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Simplified Explanation

The patent application describes a semiconductor device with an active region and conductive structures.

  • The device has an active region that extends along a first lateral direction.
  • There are first conductive structures that are connected to the active region and extend along a second lateral direction.
  • Second conductive structures are placed above the first conductive structures and extend along the first lateral direction.
  • The device also includes a first capacitor with a first electrode and a second electrode.
  • The first electrode is made up of one of the first conductive structures and the active region.
  • The second electrode is made up of one of the second conductive structures.
  • Both the active region and the first conductive structures are connected to a power rail structure that carries a supply voltage.


Original Abstract Submitted

A semiconductor device includes an active region over a substrate extending along a first lateral direction. The semiconductor device includes a number of first conductive structures operatively coupled to the active region. The first conductive structures extend along a second lateral direction. The semiconductor device includes a number of second conductive structures disposed above the plurality of first conductive structures. The second conductive structures extend along the first lateral direction. The semiconductor device includes a first capacitor having a first electrode and a second electrode. The first electrode includes one of the first conductive structures and the active region, and the second electrode includes a first one of the second conductive structures. Each of the active region and the first conductive structures is electrically coupled to a power rail structure configured to carry a supply voltage.